Abstract: The present disclosure provides a package structure and a method of manufacturing a package. The package structure includes a semiconductor die laterally encapsulated by an encapsulant, a redistribution structure and bumps. The redistribution structure is disposed on the semiconductor die and the encapsulant, and is electrically connected with the at least one semiconductor die. The bumps are disposed on the redistribution structure. The redistribution structure includes dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The redistribution structure includes metallic pads on an outermost dielectric layer of the dielectric layers, and the outmost dielectric layer has undercut cavities beside the metallic pads.

Abstract: A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.

Abstract: A semiconductor device and the manufacturing method thereof are provided. The semiconductor device includes a package structure, a first die, a first containment structure, a pre-fill layer, and a plurality of conductive terminals. The package structure includes an attach zone, a keep-out zone around the attach zone. The first die is disposed on the package structure in the attach zone and electrically connected to the package structure. The first containment structure is disposed within the keep-out zone of the package structure and surrounds the first die. The pre-fill layer is disposed between the package structure and the first die and between the first containment structure and the first die, where the pre-fill layer is constrained within the first containment structure. The conductive terminals are disposed on the package structure, distributed around the keep-out zone of the package structure, and electrically connected to the package structure.

Abstract: A semiconductor device and the manufacturing method thereof are provided. The semiconductor device includes a package structure, a first die, a first containment structure, a pre-fill layer, and a plurality of conductive terminals. The package structure includes an attach zone, a keep-out zone around the attach zone. The first die is disposed on the package structure in the attach zone and electrically connected to the package structure. The first containment structure is disposed within the keep-out zone of the package structure and surrounds the first die. The pre-fill layer is disposed between the package structure and the first die and between the first containment structure and the first die, where the pre-fill layer is constrained within the first containment structure. The conductive terminals are disposed on the package structure, distributed around the keep-out zone of the package structure, and electrically connected to the package structure.

Abstract: A package structure has first and second dies, a molding compound, a first redistribution layer, at least one first through interlayer via (TIV), second through interlayer vias (TIVs), an electromagnetic interference shielding layer and conductive elements. The first die is molded in the molding compound. The second die is disposed on the molding compound. The first redistribution layer is located between the conductive elements and the molding compound and electrically connected to the first and second dies. The molding compound is located between the second die and the first redistribution layer. The first and second TIVs are molded in the molding compound and electrically connected to the first redistribution layer. The second TIVs are located between the first die and the first TIV. The electromagnetic interference shielding layer is in contact with the first TIV. The conductive elements are connected to the first redistribution layer.

Abstract: A semiconductor device including an integrated circuit, a plurality of conductive pillars, and a protection layer is provided. The integrated circuit includes a semiconductor substrate and an interconnection structure covering the semiconductor substrate, wherein the interconnection structure includes a plurality of patterned conductive layers and a plurality of inter-dielectric layers stacked alternately, the topmost patterned conductive layer of the patterned conductive layers is covered by the topmost inter-dielectric layer of the inter-dielectric layers, and the topmost patterned conductive layer is exposed by a plurality of openings of the topmost inter-dielectric layer. The conductive pillars are disposed on the topmost patterned conductive layer exposed by the openings, and the conductive pillars are electrically connected to the topmost patterned conductive layer through the openings. The protection layer covers the integrated circuit and the conductive pillars.

Abstract: A package structure has first and second dies, a molding compound, a first redistribution layer, at least one first through interlayer via (TIV), second through interlayer vias (TIVs), an electromagnetic interference shielding layer and conductive elements. The first die is molded in the molding compound. The second die is disposed on the molding compound. The first redistribution layer is located between the conductive elements and the molding compound and electrically connected to the first and second dies. The molding compound is located between the second die and the first redistribution layer. The first and second TIVs are molded in the molding compound and electrically connected to the first redistribution layer. The second TIVs are located between the first die and the first TIV. The electromagnetic interference shielding layer is in contact with the first TIV. The conductive elements are connected to the first redistribution layer.