Abstract: An electronic device includes: a substrate including a through hole; a connecting element disposed in the through hole; a first insulating layer disposed on the substrate and including a first via; a first conductive element disposed on the first insulating layer and electrically connected to the connecting element through the first via; a second conductive element disposed under the substrate and electrically connected to the connecting element; and a semiconductor disposed between the substrate and the first insulating layer.

Abstract: An electronic device includes a substrate, a first transistor and a second transistor. The first transistor is disposed on the substrate and has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second transistor is disposed on the substrate and has a first terminal electrically connected to the second terminal of the first transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first transistor. Wherein a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.

Abstract: The invention relates to a display device including a substrate, a plurality of pixels, a first insulating layer, a first conductive layer and a second conductive layer. The plurality of pixels are disposed on the substrate and comprise an active layer. The first insulating layer is disposed on the substrate and comprises a plurality of first recesses. The first conductive layer is disposed on the first insulating layer. The second conductive layer is electrically connected to the first conductive layer through one of the plurality of first recess. The active layer is disposed on the first insulating layer.

Abstract: An electronic device includes an insulating layer and a connective portion at least partially disposed in the insulating layer. The electronic device also includes a processing unit and an electronic element. The processing unit and the electronic element are respectively corresponding to opposite sides of the insulating layer. The processing unit and the electronic element are overlapped with the connective portion.

Abstract: A method for manufacturing an electronic device is disclosed. The electronic device has a first region and a transparent region. The method includes the steps of providing a flexible substrate, forming an electric circuit layer on the flexible substrate at an elevated temperature, forming an opening in the transparent region after forming the electric circuit layer, wherein the opening penetrates through a portion of the electric circuit layer, and forming a filling layer on the flexible substrate after forming the opening, wherein at least a part of the filling layer is formed in the opening to enhance a transmittance of the transparent region.

Abstract: An electronic device includes a substrate, a circuit layer, a first light emitting unit, a second light emitting unit, and a light conversion layer. The circuit layer is disposed on the substrate. The first and second light emitting units are disposed on the circuit layer and are respectively electrically connected to the circuit layer. The light conversion layer is disposed on the first and second light emitting units and includes a first light conversion unit overlapping the first light emitting unit and a second light conversion unit overlapping the second light emitting unit. The first and second light conversion units correspond to a first color. In a top view, an area of the first light emitting unit is smaller than an area of the second light emitting unit, and an area of the first light conversion unit is the same as an area of the second light conversion unit.

Abstract: An electronic device is provided. The electronic device includes a substrate, a driving layer, a semiconductor element, an insulating layer, a first conductive element and a second conductive element. The driving layer is disposed on the substrate and includes a transistor. The semiconductor element is disposed on the driving layer. The insulating layer is disposed between the driving layer and the semiconductor element. The first conductive element passes through the insulating layer to be electrically connected to the semiconductor element. The second conductive element passes through the insulating layer to be electrically connected to the semiconductor element. Moreover, the semiconductor element is electrically connected to the driving layer through the first conductive element and the second conductive element.

Abstract: An array substrate structure is provided, which includes a substrate with a first surface and a second surface opposite to the first surface. A first TFT is on the first surface of the substrate, and a second TFT is on the second surface of the substrate. A through via passes through the substrate, and the first TFT is electrically connected to the second TFT through the through via.

Abstract: A semiconductor structure including a first epitaxial region, a second epitaxial region, a gate structure, a source region, a source electrode and a drain electrode. The second epitaxial region is disposed on the first epitaxial region. The gate structure is disposed on the second epitaxial region. The source region is disposed on the second epitaxial region and adjacent to the gate structure. The source electrode is disposed on the source region and is electrically connected to the source region. The drain electrode is disposed on the first epitaxial region and is electrically connected to the first epitaxial region. The first epitaxial region includes an impurity region on a side away from the second epitaxial region, and a concentration of impurities included in the impurity region increases with approaching the second epitaxial region.

Abstract: The disclosure provides an electronic device including a substrate, a first vibrating unit, and a supporting unit. The substrate has a first surface. The first vibrating unit is disposed on the first surface and has a second surface. The second surface faces the first surface. The supporting unit is disposed between the substrate and the first vibrating unit. The first surface and the second surface are separated by a distance through the supporting unit. This distance ranges from equal to or greater than 0.06 mm to equal to or less than 65.4 mm.

Abstract: An electronic device is disclosed, which includes: a substrate including a first region and a second region; a biometric sensing module disposed corresponding to the first region; a display medium layer disposed on the substrate; a touch sensing layer disposed on the display medium layer, wherein the touch sensing layer includes a first touch sensing region and a second touch sensing region, the first touch sensing region corresponds to the second region, and the second touch sensing region corresponds to the first region; wherein a reflectivity of the first touch sensing region is different from a reflectivity of the second touch sensing region.

Abstract: A method of manufacturing an electronic device includes: forming a sacrificial layer on a substrate; forming a semiconductor structure on the sacrificial layer; separating the semiconductor structure from the substrate; detecting defects on the substrate; and classifying the substrate.

Abstract: An electronic device having a first mode and a second mode is provided. The electronic device includes a signal transmission component, a first display portion and a second display portion. The signal transmission component extends along a first direction. The first display portion is electrically connected to the signal transmission component, and the second display portion is electrically connected to the signal transmission component through a first wire. A first area of the electronic device in the first mode is greater than a second area of the electronic device in the second mode, and along a second direction perpendicular to the first direction, the first display portion is separated from the signal transmission component by a first distance and the second display portion is separated from the signal transmission component by a second distance when the electronic device is in the first mode, and the first distance is less than the second distance.

Abstract: A method of forming a film layer by using a recycled gas including the following steps is provided. First, providing a reactor. Next, collecting a tail gas generated after a reaction to form the film layer in a reaction chamber of the reactor. Afterwards, purifying the collected tail gas to obtain a purified precursor. After that, transporting the purified precursor into the reaction chamber.

Abstract: A light emitting device includes a substrate, a plurality of light emitting parts disposed on the substrate, an organic layer disposed on at least one of the plurality of light emitting parts, a circuit layer disposed on the substrate, and a first layer disposed between the organic layer and the circuit layer.

Abstract: An electronic device is disclosed. The electronic device includes a substrate, a first conductive element disposed above the substrate, a first electronic unit disposed above the first conductive element, a second electronic unit disposed above the first conductive element, and a connection electrode disposed above the first conductive element, wherein the first conductive element is electrically connected to the first electronic unit and the second electronic unit through the connection electrode.

Abstract: An electronic device is disclosed, which includes: a substrate; a first metal layer, disposed on the substrate and having a light shielding region and a light passing region; an electrode layer, disposed on the substrate, wherein the first metal layer is disposed between the substrate and the electrode layer; and a light detecting element for detecting a light passing through the light passing region; wherein a first edge of the light shielding region of the first metal layer has a first slope, and the first slope is less than 90°.

Abstract: An electronic device includes a substrate, an electroluminescence element, a partition structure, a light conversion element and an intermediate layer. The electroluminescence element is disposed above the substrate. The partition structure is disposed above the electroluminescence element and includes a first opening. The light conversion element is disposed in the first opening. The intermediate layer is disposed above the light conversion element and the partition structure. In a top-view direction, a part of a surface of the intermediate layer overlaps the light conversion element, and another part of the surface of the intermediate layer overlaps the partition structure. In a section view, a maximum distance between the part of the surface of the intermediate layer and a surface of the substrate is greater than a maximum distance between the another part of the surface of the intermediate layer and the surface of the substrate.

Abstract: An electronic device includes a substrate, a silicon semiconductor disposed on the substrate, an oxide semiconductor disposed on the substrate, a sensor configured to receive a light and output a signal, and a light-shielding element including a conductive material and disposed between the sensor and the oxide semiconductor. The oxide semiconductor is electrically connected to the silicon semiconductor. The silicon semiconductor and the oxide semiconductor are active corresponding to the signal.