Patents by Inventor KUAN-FU LU

KUAN-FU LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR IMAGE-SENSING STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20250126912
    Abstract: A semiconductor image-sensing structure includes a reflective grid and a reflective shield disposed over a substrate. The reflective grid is disposed in a first region, and the reflective shield is disposed in a second region separated from the first region. A thickness of the reflective shield is greater than a thickness of the reflective grid.
    Type: Application
    Filed: December 26, 2024
    Publication date: April 17, 2025
    Inventors: MING-HSIEN YANG, WEN-I HSU, KUAN-FU LU, FENG-CHI HUNG, JEN-CHENG LIU, DUN-NIAN YAUNG, CHUN-HAO CHOU, KUO-CHENG LEE
  • Semiconductor image-sensing structure and method for forming the same
    Patent number: 12218164
    Abstract: A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Hsien Yang, Wen-I Hsu, Kuan-Fu Lu, Feng-Chi Hung, Jen-Cheng Liu, Dun-Nian Yaung, Chun-Hao Chou, Kuo-Cheng Lee
  • SEMICONDUCTOR IMAGE-SENSING STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20230275109
    Abstract: A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.
    Type: Application
    Filed: January 28, 2022
    Publication date: August 31, 2023
    Inventors: MING-HSIEN YANG, WEN-I HSU, KUAN-FU LU, FENG-CHI HUNG, JEN-CHENG LIU, DUN-NIAN YAUNG, CHUN-HAO CHOU, KUO-CHENG LEE