Patents by Inventor Kuan H. Sun

Kuan H. Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4056408
    Abstract: A method of reducing the switching time of certain semiconductor devices and particularly gain-operated semiconductor devices. The depth of maximum defect generation in a given type of semiconductor devices having a block PN junction is determined on irradiation with a given radiation source emitting particles with molecular weight of at least one (1), preferably protons or alpha particles; and the energy level of the radiation source adjusted to provide the depth of maximum defect generation adjacent a blocking PN junction of the type of semiconductor device. At least one semiconductor device of said given type of semiconductor device is positioned with a major surface thereof to be exposed to the adjusted radiation source, and thereafter irradiated with the adjusted radiation source to a given dosage level to reduce the switching time of the semiconductor device.
    Type: Grant
    Filed: March 17, 1976
    Date of Patent: November 1, 1977
    Assignee: Westinghouse Electric Corporation
    Inventors: John Bartko, Kuan H. Sun