Abstract: Provided is a biocompatible composition includes a chitosan-based hydrogel and a dextran solution. Also provided is a method for preparing the biocompatible composition includes reacting the chitosan-based hydrogel with the dextran solution via a cross-linking reaction. Further provided is a method of tissue adhesion includes administering the biocompatible composition to a subject in need thereof.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: An image input system and an image input method thereof are disclosed. The system includes an input equipment which includes an image capturing module and a first communication module, and a processing apparatus which includes a second communication module, a calculation module and a conversion module. The image capturing module is configured to capture an image of an object on a display and to detect an image-capturing distance or a position of the object. The captured image, the image-capturing distance or the object position is then communicated to the processing apparatus and may be analyzed by the calculation module to calculate an edge position of the image. The conversion module is configured to convert the edge position, the captured image or the object position to an input signal. This invention creates a new type of human-machine interface through the image capturing module, and the first and second communication modules.