Abstract: A light emitting panel includes a circuit substrate, a plurality of first light emitting components, a plurality of second light emitting components, and a plurality of third light emitting components. The circuit substrate has a plurality of main pixel areas. Each main pixel area is divided into a first subpixel area, a second subpixel area, and a third subpixel area. The first light emitting components, the second light emitting components and the third light emitting components are located in the first subpixel areas, the second subpixel areas and the third subpixel areas respectively. The first light emitting components in two adjacent first subpixel areas are electrically connected in series. The size of each of the first light emitting components is larger than the size of each of the second light emitting components and the third light emitting components.

Abstract: A light emitting device including an active layer, a first semiconductor layer, a first contact layer, and a first current limiting layer is provided. The first semiconductor layer is disposed at a first side of the active layer. The first contact layer is disposed at a side of the first semiconductor layer away from the active layer. The first current limiting layer is disposed between the first contact layer and the active layer, and is provided with a first non-oxidizing region and a first oxidizing region located around the first non-oxidizing region. The first current limiting layer has a first surface facing the active layer and a second surface away from the first surface. The first oxidizing region is extended from the first surface to the second surface, and an oxygen content of the first oxidizing region is greater than an oxygen content of the first non-oxidizing region.

Abstract: A pixel structure, including a first semiconductor layer, a first active layer, a second semiconductor layer, a second active layer, a third semiconductor layer, and an electrode layer that are sequentially stacked, is provided. A first portion of the electrode layer is electrically connected to a first portion of the first semiconductor layer through a first opening of a first portion of the third semiconductor layer, a first opening of a first portion of the second active layer, a first opening of a first portion of the second semiconductor layer, and a first opening of a first portion of the first active layer. A second portion of the electrode layer is electrically connected to a second portion of the second semiconductor layer through a second opening of a second portion of the third semiconductor layer and a second opening of a second portion of the second active layer.

Abstract: A light-emitting device includes a carrier, a reflection layer, a common electrode and a first semiconductor stack. The carrier has a light-emitting region, an electrical connection region and a trench, which separates the light-emitting region from the electrical connection region. The reflection layer is disposed on a sidewall of the trench. The common electrode is disposed in the electrical connection region. The first semiconductor stack is disposed in the light-emitting region, wherein a first type semiconductor layer of the first semiconductor stack is electrically connected to the common electrode. A light-emitting apparatus including the light-emitting device is also provided.

Abstract: A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a multi-layer film. The second type semiconductor layer overlaps the first type semiconductor layer. The light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer and is located on a side of the first type semiconductor layer close to the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer and is located on a side of the second type semiconductor layer facing away from the first type semiconductor layer. The multi-layer film is located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer and has a protrusion portion.

Abstract: A display device includes: a light source having a light emitting surface configured to emit light, a light transmitting layer covering the light source and having a light exit surface configured to receive the light emitted from the light emitting surface, a first metasurface formed between the light emitting surface and the light transmitting layer and configured to concentrate the light emitted by the light source in a first direction along the light emitting surface, and a second metasurface formed on the light exit surface and configured to split the light received by the light exit surface in the first direction.

Abstract: An illumination apparatus including a transparent substrate, an opposite substrate and an electroluminescence structure disposed between the transparent substrate and the opposite substrate is provided. The transparent substrate has a first region and a second region adjacent to the first region. The electroluminescence structure is disposed on the transparent substrate. The electroluminescence structure includes a first electrode disposed in the first region, an optical adjusting layer disposed in the second region, an organic electroluminescence layer disposed above the first electrode and the optical adjusting layer and a common electrode disposed above the organic electroluminescence layer. The optical adjusting layer is disposed between the organic electroluminescence layer and the transparent substrate.

Abstract: A light emitting device includes a semiconductor structure, an insulating layer, a first electrode, a second electrode, and a third electrode. The semiconductor structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer disposed between the first type semiconductor layer and the second type semiconductor layer. The insulating layer is disposed on the semiconductor structure. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. The first electrode, the second electrode, and the third electrode are structurally separated. The third electrode at least has a first portion. The first portion of the third electrode is disposed on a side wall of the semiconductor structure, and the insulating layer is located between the third electrode and the semiconductor structure.

Abstract: A light emitting panel includes a circuit substrate, a plurality of first light emitting components, a plurality of second light emitting components, and a plurality of third light emitting components. The circuit substrate has a plurality of main pixel areas. Each main pixel area is divided into a first subpixel area, a second subpixel area, and a third subpixel area. The first light emitting components, the second light emitting components and the third light emitting components are located in the first subpixel areas, the second subpixel areas and the third subpixel areas respectively. The first light emitting components in two adjacent first subpixel areas are electrically connected in series. The size of each of the first light emitting components is larger than the size of each of the second light emitting components and the third light emitting components.

Abstract: A pixel structure, including a first semiconductor layer, a first active layer, a second semiconductor layer, a second active layer, a third semiconductor layer, and an electrode layer that are sequentially stacked, is provided. A first portion of the electrode layer is electrically connected to a first portion of the first semiconductor layer through a first opening of a first portion of the third semiconductor layer, a first opening of a first portion of the second active layer, a first opening of a first portion of the second semiconductor layer, and a first opening of a first portion of the first active layer. A second portion of the electrode layer is electrically connected to a second portion of the second semiconductor layer through a second opening of a second portion of the third semiconductor layer and a second opening of a second portion of the second active layer.

Abstract: This invention provides a method applied for the new dynamic arc radiotherapy treatment planning to calculate an optimal arc angle. With this invention, an operator without rich experience is able to reach the expected low dose in lungs easily and quickly. This invention can not only estimate the distribution of low radiation dose in lungs but also reduce the shortcomings like consumption of time and inaccuracy caused by manual trial and error.

Abstract: An electroluminescent device includes a substrate, a first electrode, a patterned pixel define layer, a first color layer, a first connection layer, a second color layer, and a second electrode. The patterned pixel define layer has a first opening. A projected area of the first opening on the substrate is A. The first color layer is located in the first opening and electrically connected to the first electrode. A projected area of the first connection layer on the substrate is B. The second color layer is located between the first connection layer and the second electrode. When a ratio of B to A is r1, light emitted by the electroluminescent device has a first color temperature. When the ratio of B to A is r2, the light emitted by the electroluminescent device has a second color temperature.

Abstract: This invention provides a method applied for the new dynamic arc radiotherapy treatment planning to calculate an optimal arc angle. With this invention, an operator without rich experience is able to reach the expected low dose in lungs easily and quickly. This invention can not only estimate the distribution of low radiation dose in lungs but also reduce the shortcomings like consumption of time and inaccuracy caused by manual trial and error.

Abstract: An illumination apparatus including a transparent substrate, an opposite substrate and an electroluminescence structure disposed between the transparent substrate and the opposite substrate is provided. The transparent substrate has a first region and a second region adjacent to the first region. The electroluminescence structure is disposed on the transparent substrate. The electroluminescence structure includes a first electrode disposed in the first region, an optical adjusting layer disposed in the second region, an organic electroluminescence layer disposed above the first electrode and the optical adjusting layer and a common electrode disposed above the organic electroluminescence layer. The optical adjusting layer is disposed between the organic electroluminescence layer and the transparent substrate.

Abstract: An electroluminescent device includes a substrate, a first electrode, a patterned pixel define layer, a first color layer, a first connection layer, a second color layer, and a second electrode. The patterned pixel define layer has a first opening. A projected area of the first opening on the substrate is A. The first color layer is located in the first opening and electrically connected to the first electrode. A projected area of the first connection layer on the substrate is B. The second color layer is located between the first connection layer and the second electrode. When a ratio of B to A is r1, light emitted by the electroluminescent device has a first color temperature. When the ratio of B to A is r2, the light emitted by the electroluminescent device has a second color temperature.

Abstract: A gap fill treatment for via process is provided. A substrate with a plurality of openings has formed therein is provided. The substrate includes a dense pattern region and an isolated pattern region. A positive resist layer is formed to fill in the openings on the substrate, wherein the thickness of the positive resist layer on the surface of the isolated pattern region is greater than that on the surface of the dense pattern region. The positive resist layer on the surface of the substrate is exposed only. The exposed positive resist layer is developed to form a gap-filling material layer, wherein the gap-filling material layer has the same thickness in the dense pattern region and in the isolated pattern region. A reagent is coated on the surface to form a reaction layer. The reaction layer is removed so that a cap layer remained on the gap-filling material layer.

Abstract: An organic electroluminescent device including an anode layer, an organic functional layer and a cathode layer is provided. The organic functional layer is disposed between the anode layer and the cathode layer. The cathode layer includes a first conductive layer and a second conductive layer. The first conductive layer is disposed between the organic functional layer and the second conductive layer, and work function of the first conductive layer is higher than work function of the second conductive layer.

Abstract: An organic electroluminescent device including an anode layer, an organic functional layer and a cathode layer is provided. The organic functional layer is disposed between the anode layer and the cathode layer. The cathode layer includes a first conductive layer and a second conductive layer. The first conductive layer is disposed between the organic functional layer and the second conductive layer, and work function of the first conductive layer is higher than work function of the second conductive layer.