Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.

Abstract: A wearable device includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point, and is coupled to a first grounding point on the ground element. A slot region is surrounded by the first radiation element and the ground element. The second radiation element is coupled to a second grounding point on the ground element. The third radiation element is coupled to the second grounding point. The third radiation element and the second radiation element substantially extend in opposite directions. The fourth radiation element and the fifth radiation element are disposed inside the slot region. An antenna structure is formed by the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: A method for fabricating a packaging substrate includes: providing a carrier having a first metal layer and a second metal layer formed on the first metal layer; forming a first circuit layer on the second metal layer and forming a separating portion on an edge of the second metal layer such that the separating portion is spaced from the first circuit layer; forming a dielectric layer on the second metal layer and the first circuit layer such that the first circuit layer and the separating portion are embedded in the dielectric layer and portions of the dielectric layer are formed between the first circuit layer and the separating portion; forming a second circuit layer on the dielectric layer; and applying forces on the separating portion so as to remove the first metal layer and the carrier, thereby maintaining the integrity of the first circuit layer.

Abstract: A method for fabricating a packaging substrate includes: providing a carrier having a first metal layer and a second metal layer formed on the first metal layer; forming a first circuit layer on the second metal layer and forming a separating portion on an edge of the second metal layer such that the separating portion is spaced from the first circuit layer; forming a dielectric layer on the second metal layer and the first circuit layer such that the first circuit layer and the separating portion are embedded in the dielectric layer and portions of the dielectric layer are formed between the first circuit layer and the separating portion; forming a second circuit layer on the dielectric layer; and applying forces on the separating portion so as to remove the first metal layer and the carrier, thereby maintaining the integrity of the first circuit layer.