Patents by Inventor Kuan-Ku Hung

Kuan-Ku Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preventing localized Cu corrosion during CMP
    Patent number: 6726535
    Abstract: A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process including providing a semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the semiconductor wafer polishing surface according to a first CMP process including applying at least one polishing slurry to contact the semiconductor wafer polishing surface for removing an uppermost layer of the semiconductor wafer polishing surface; and, alternately applying a copper corrosion inhibitor solution for a period of time and the at least one polishing slurry for a period of time to contact the semiconductor wafer polishing surface to comprise a polishing cycle said polishing cycle performed at least once during at least a second CMP process.
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: April 27, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsu Shih, Kuan-Ku Hung, Chen-Hua Yu
  • Method for preventing localized Cu corrosion during CMP
    Publication number: 20030203706
    Abstract: A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process including providing a semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the semiconductor wafer polishing surface according to a first CMP process including applying at least one polishing slurry to contact the semiconductor wafer polishing surface for removing an uppermost layer of the semiconductor wafer polishing surface; and, alternately applying a copper corrosion inhibitor solution for a period of time and the at least one polishing slurry for a period of time to contact the semiconductor wafer polishing surface to comprise a polishing cycle said polishing cycle performed at least once during at least a second CMP process.
    Type: Application
    Filed: April 25, 2002
    Publication date: October 30, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsu Shih, Kuan-Ku Hung, Chen-Hua Yu