Abstract: A device includes a transistor, a backside via, and a pair of sidewall spacers. The transistor includes a gate structure, a channel layer surrounded by the gate structure, and a first source/drain structure and a second source/drain structure connected to the channel layer. The backside via is under and connected to the first source/drain structure and includes a first portion, a second portion between the first portion and the first source/drain structure, and a third portion tapering from the first portion to the second portion in a cross-sectional view. The pair of sidewall spacers are on opposite sidewalls of the second portion of the backside via but not on opposite sidewalls of the first portion of the backside via.

Abstract: A photographing lens assembly includes, in order from an object side to an image side: a first, a second, a third, a fourth, a fifth and a sixth lens elements. The first lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, wherein the object-side surface has at least one convex critical point in an off-axis region thereof. The third lens element has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, and an image-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface has at least one convex critical point in an off-axis region thereof.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate; semiconductor layers over the substrate, wherein the semiconductor layers are separate from each other and are stacked up along a direction generally perpendicular to a top surface of the substrate; a dielectric feature over and separate from the semiconductor layers; and a gate structure wrapping around each of the semiconductor layers, the gate structure having a gate dielectric layer and a gate electrode layer, wherein the gate dielectric layer interposes between the gate electrode layer and the dielectric feature and the dielectric feature is disposed over at least a part of the gate electrode layer.

Abstract: A light source assembly includes a first annular reflector, a second annular reflector and a plurality of first light source modules. The first annular reflector has a first reflective surface. The second annular reflector is coaxial with the first annular reflector. A radius of the first annular reflector is greater than that of the second annular reflector. The second annular reflector has a second reflective surface facing the first reflective surface. The first light source modules take a central axis of the first annular reflector as a center and annularly arranged around the center. The first light source modules provide first beams to the first reflective surface, which reflects the first beams to the second reflective surface. The second reflective surface reflects the first beams and makes the first beams emit along a direction parallel to a central axis of the second annular reflector. A projection device is also provided.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: The disclosure relates to a projection device and a color gamut switching method thereof. The projection device includes a light source, a wavelength conversion element, an optical engine module, a projection lens module, and a filter element. The light source is configured to emit a first light beam. The wavelength conversion element is disposed on a transmission path of the first light beam, and the wavelength conversion element is configured to convert the first light beam into a second light beam. The optical engine module is disposed on a transmission path of the second light beam from the wavelength conversion element. The optical engine module is configured to convert the second light beam to form an image beam. The projection lens module is disposed on a transmission path of the image beam from the optical engine module. The filter element is removably disposed on the transmission path of the second light beam or the image beam.

Abstract: The disclosure relates to a projection device and a color gamut switching method thereof. The projection device includes a light source, a wavelength conversion element, an optical engine module, a projection lens module, and a filter element. The light source is configured to emit a first light beam. The wavelength conversion element is disposed on a transmission path of the first light beam, and the wavelength conversion element is configured to convert the first light beam into a second light beam. The optical engine module is disposed on a transmission path of the second light beam from the wavelength conversion element. The optical engine module is configured to convert the second light beam to form an image beam. The projection lens module is disposed on a transmission path of the image beam from the optical engine module. The filter element is removably disposed on the transmission path of the second light beam or the image beam.

Abstract: A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantially perpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions.

Abstract: A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantially perpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions.