Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: An electronic includes an electronic element, an encapsulation layer surrounding the electronic element, a first circuit structure, a second circuit structure and a connecting structure. The encapsulation layer has a top surface, a bottom surface and an opening, wherein a sidewall of the opening connects the top surface and the bottom surface. The first circuit structure is disposed at the top surface of the encapsulation layer. The second circuit structure is disposed at the bottom surface of the encapsulation layer. The connecting structure is disposed in the opening, wherein the electronic element is electrically connected to the second circuit structure through the first circuit structure and the connecting structure. The connecting structure includes a first sub layer and a second sub layer, the first sub layer is located between the encapsulation layer and the second sub layer, and the first sub layer covers the sidewall of the opening.

Abstract: A sensing device includes a robotic hand, an electrode and a triboelectric sensing layer. The robotic hand includes at least one robot finger. One robot finger is integrated with an electrode layer which is functionalized with a triboelectric sensing layer. The triboelectric sensing layer is composed of plurality of nanostructures including Tellurium. The robot hand with triboelectric sensing layer undergoes contact and separation with the target analyte solution having mercury ions which leads to the formation of mercury telluride owing to the highly selective between of mercury ions to the Tellurium surface. After contacting with the target analyte, the electron transfer ability of the nanostructures attached to robot finger is altered. This process of contact electrification causes the induction of electrons to the electrode layer generating the triboelectric output voltage. The triboelectric output voltage is utilized to determine the concentration of mercury ions in the target analyte solution.