Abstract: A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.

Abstract: A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising AlxGa1-xAs, a channel comprising InyGa1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising AlzGa1-zAs with 0.1?z?0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

Abstract: The invention provides a gait evaluating system and a gait evaluating method. The gait evaluation system includes a gait evaluating device configured to: obtain, from a pressure detection device, a plurality of pressure values of a user walking on the pressure detection device; obtain a plurality of step feature values of the user based on the pressure values; obtain a plurality of walking limb feature values when the user walks on the pressure detection device based on a sensing data provided by a limb sensing device; and evaluate a gait of the user based on the step feature values and the walking limb feature values.

Abstract: A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising AlxGa1-xAs, a channel comprising InyGa1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising AlzGa1-zAs with 0.1?z?0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.