Abstract: To provide a gas-liquid separator of a water electrolysis system, comprising: a liquid feeding atomizer and a gas-liquid separation chamber, wherein the liquid feeding atomizer includes a liquid feeding pressurized tube; and an atomizing spray head, in which the atomizing spray head converts a gas-liquid mixed liquor after pressurized by the liquid feeding pressurized tube into a mist droplet gas-liquid mixture. The gas-liquid separation chamber comprises a spiral flowing way, and the spiral flowing way extends the time that the mist droplet gas-liquid mixture spraying into the gas-liquid separation chamber flows downwards to the bottom of the gas-liquid separation chamber; an ultrasonic oscillation mechanism; a stirrer; an internal reservoir; and a filter mechanism, which performs the gas-liquid separation for unbroken bubbles in the mist droplet gas-liquid mixture through the pore difference.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.