Abstract: A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a protection layer on the SiC substrate; forming an resisting layer on the protection layer; patterning the resisting layer and the protection layer to form an opening; patterning the SiC substrate by using the patterned resisting layer as a hard mask to form a trench; removing the patterned resisting layer; performing a high-temperature annealing process to form a rounded bottom of the trench; and removing the protection layer.

Abstract: A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a protection layer on the SiC substrate; forming an resisting layer on the protection layer; patterning the resisting layer and the protection layer to form an opening; patterning the SiC substrate by using the patterned resisting layer as a hard mask to form a trench; removing the patterned resisting layer; performing a high-temperature annealing process to form a rounded bottom of the trench; and removing the protection layer.

Abstract: A Schottky barrier diode and fabricating method thereof are disclosed. A semiconductor substrate may have a first surface and a second surface positioned oppositely to be provided. Several trenches are formed on the first surface. Each trench has a sidewall with a first depth and a first bottom surface. An insulating material is formed on the first surface of the semiconductor substrate and on the sidewall and the first bottom surface of each trench, wherein the insulating material has a first thickness on the sidewall. The insulating material on the sidewall is patterned to define a second bottom surface having a second depth smaller than the first depth, and the removed portion of the insulating material on the sidewall has a second thickness smaller than the first thickness. Afterward, a contact metal layer is at least formed on the first surface between adjacent trenches.

Abstract: A Schottky barrier diode and fabricating method thereof are disclosed. A semiconductor substrate may have a first surface and a second surface positioned oppositely to be provided. Several trenches are formed on the first surface. Each trench has a sidewall with a first depth and a first bottom surface. An insulating material is formed on the first surface of the semiconductor substrate and on the sidewall and the first bottom surface of each trench, wherein the insulating material has a first thickness on the sidewall. The insulating material on the sidewall is patterned to define a second bottom surface having a second depth smaller than the first depth, and the removed portion of the insulating material on the sidewall has a second thickness smaller than the first thickness. Afterward, a contact metal layer is at least formed on the first surface between adjacent trenches.