Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Abstract: The present disclosure relates to a hybrid integrated circuit. In one implementation, an integrated circuit may have a first region with a first gate structure having a ferroelectric gate dielectric, at least one source associated with the first gate of the first region, and at least one drain associated with the first gate structure of the first region. Moreover, the integrated circuit may have a second region with a second gate structure having a high-? gate dielectric, at least one source associated with the second gate structure of the second region, and at least one drain associated with the second gate structure of the second region. The integrated circuit may further have at least one trench isolation between the first region and the second region.

Abstract: An integrated circuit (IC) structure with a nanowire power switch device and a method of forming the IC structure are disclosed. The IC structure includes a front end of line (FEOL) device layer having a plurality of active devices, a first back end of line (BEOL) interconnect structure on the (FEOL) device layer, and a nanowire switch on the first BEOL interconnect structure. A first end of the nanowire switch is connected to an active device of the plurality of active devices through the first BEOL interconnect structure. The IC structure further includes a second BEOL interconnect structure on the nanowire switch. A second end of the nanowire switch is connected to a power source through the second BEOL interconnect structure and the second end is opposite to the first end.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a frontside and a backside. The workpiece includes a substrate, a first plurality of channel members over a first portion of the substrate, a second plurality of channel members over a second portion of the substrate, an isolation feature sandwiched between the first and second portions of the substrate. The method also includes forming a joint gate structure to wrap around each of the first and second pluralities of channel members, forming a pilot opening in the isolation feature, extending the pilot opening through the join gate structure to form a gate cut opening that separates the joint gate structure into a first gate structure and a second gate structure, and depositing a dielectric material into the gate cut opening to form a gate cut feature.

Abstract: An electronic structure is provided, in which a plurality of conductors are disposed on one surface of an electronic body, an epoxy molding compound is used as a protective layer to encapsulate the plurality of conductors, a circuit portion is bonded onto the other surface of the electronic body, and a plurality of external bumps and solder material are formed on the circuit portion. Therefore, with the design of the protective layer, heat energy can be effectively transferred from the protective layer to the solder material below during a process of heating the electronic structure so as to avoid a problem of non-wetting of the solder material.

Abstract: Present disclosure provides a method for forming a semiconductor structure, including forming a dielectric layer over a semiconductor substrate, patterning an insulator stripe over the semiconductor substrate, including forming an insulator layer over the semiconductor substrate and at a bottom of the insulator stripe, depositing a semiconductor capping layer continuously over the insulator stripe, wherein the semiconductor capping layer includes crystalline materials, wherein the semiconductor capping layer is free from being in direct contact with the semiconductor substrate, and cutting off the semiconductor capping layer between the insulator stripes, forming a gate, wherein the gate is in direct contact with the semiconductor capping layer, a first portion of the semiconductor capping layer covered by the gate is configured as a channel structure, and forming a conductible region at a portion of the insulator stripe not covered by the gate stripe by a regrowth operation.

Abstract: A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A semiconductor package is provided, which includes: a carrier; a frame having a plurality of openings, wherein the frame is bonded to the carrier and made of a material different from that of the carrier; a plurality of electronic elements disposed in the openings of the frame, respectively; an encapsulant formed in the openings of the frame for encapsulating the electronic elements; and a circuit layer formed on and electrically connected to the electronic elements. By accurately controlling the size of the openings of the frame, the present invention increases the accuracy of positioning of the electronic elements so as to improve the product yield in subsequent processes.

Abstract: A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: A method of fabricating a semiconductor package is provided, including providing an interposer having a plurality of conductive elements, disposing the interposer on a carrier having a plurality of recessed portions for the conductive elements to be received therein such that the interposer is coupled to the carrier, attaching the semiconductor element to the interposer, and removing the carrier. Coupling the interposer to the carrier prevents the conductive elements from displacement under pressure. Therefore, the conductive elements will not be in poor or no electrical contact with the interposer.

Abstract: A fabrication method of a semiconductor package is provided, which includes the steps of: cutting a substrate into a plurality of interposers; disposing the interposers on a carrier, wherein the interposers are spaced from one another by a distance; disposing at least a semiconductor element on each of the interposers; forming an encapsulant to encapsulate the interposers and the semiconductor elements; and removing the carrier. Therefore, by cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Abstract: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.