Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A semiconductor device includes a plurality of fin structures disposed over a substrate and a work function alloy layer disposed over each fin structure of the plurality of fin structures. The plurality of fin structures includes a first fin structure and a second fin structure. A content of a first element in a first portion of the work function alloy layer, which portion is disposed over the first fin structure, is different from a content of the first element in a second portion of the work function alloy layer, which portion is disposed over the second fin structure.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: An electronic device, a method, and a computer-readable recording medium are provided for deactivating a chat room of a messenger application. The electronic device is configured for: receiving a deactivation request for one or more chat rooms, in which the deactivation request is associated with a chat room configuration, and the chat room configuration includes a deactivation condition for the one or more chat rooms; storing the chat room configuration including the deactivation condition for the one or more chat rooms based on the deactivation request; and deactivating the one or more chat rooms based on determining whether or not the deactivation condition for the one or more chat rooms is satisfied.

Abstract: The present disclosure provides an electronic device, and a radio-frequency device and a signal transmission component thereof. The signal transmission component is operable in an operating frequency band and applied in a radio frequency device having a signal connector and a radio frequency circuit. The signal transmission component includes a signal transmission line and an electrostatic protection unit. The signal transmission line is disposed between the signal connector and the radio frequency circuit. The electrostatic protection unit is electrically connected to the signal transmission line, and includes a connecting end and a grounding end. An impedance of the electrostatic protection unit is greater than an impedance of the signal transmission line. An electrical length is defined between the connecting end and the grounding end, and the electrical length is less than ¼ of a wavelength corresponding to a lowest operating frequency within the operating frequency band.

Abstract: The present disclosure provides an electronic device, and a radio-frequency device and a signal transmission component thereof. The signal transmission component is operable in an operating frequency band and applied in a radio frequency device having a signal connector and a radio frequency circuit. The signal transmission component includes a signal transmission line and an electrostatic protection unit. The signal transmission line is disposed between the signal connector and the radio frequency circuit. The electrostatic protection unit is electrically connected to the signal transmission line, and includes a connecting end and a grounding end. An impedance of the electrostatic protection unit is greater than an impedance of the signal transmission line. An electrical length is defined between the connecting end and the grounding end, and the electrical length is less than ¼ of a wavelength corresponding to a lowest operating frequency within the operating frequency band.