Patents by Inventor Kuan-Wen Lin
Kuan-Wen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240031360Abstract: According to embodiments of the present invention, method and system for log-in and authorization are disclosed. The system comprises a user device, a server and a mobile device. The user device issues a log-in request. The server receives the log-in request through communication with the user device via a first communication link, and outputs a digital token as one time passwords (OTPs) to the user device in response to the log-in request, for display thereon. The mobile device comprises a communication unit, a camera and a processor. The communication unit communicates with the server via a second communication link. The processor is configured to capture the digital token through the camera, transmit the captured digital token to the server for verification, authenticate a biometric characteristic, and output a notice indicating successful biometric authentication to the server to confirm authorization of the user device. Then, the user device can be used to proceed with an operation with a user account.Type: ApplicationFiled: March 17, 2023Publication date: January 25, 2024Applicant: DBS BANK (TAIWAN) LTD.Inventors: Chia-Hua WU, Chun-Chin PENG, Shih-Chieh CHUEH, Kuan-Wen LIN
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Publication number: 20230366857Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.Type: ApplicationFiled: July 19, 2023Publication date: November 16, 2023Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
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Publication number: 20230314963Abstract: A photolithographic apparatus includes a particle removing cassette, a pump and a compressor. The particle removing cassette includes a first slit that includes an array of parallel wind blade nozzles arranged along a length of the first slit, protruding from the first slit, and configured to eject and direct pressurized cleaning material to a patterning surface of a mask to remove debris particles on the patterning surface. The pump and the compressor are controlled by a controller to adjust a flow rate and a pressure of the pressurized cleaning material based on an amount of debris particles on the patterning surface of the mask.Type: ApplicationFiled: May 23, 2023Publication date: October 5, 2023Inventors: Chen-Yang LIN, Da-Wei YU, Li-Hsin WANG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
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Patent number: 11709153Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.Type: GrantFiled: November 23, 2020Date of Patent: July 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
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Patent number: 11698592Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.Type: GrantFiled: April 4, 2022Date of Patent: July 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Yang Lin, Da-Wei Yu, Li-Hsin Wang, Kuan-Wen Lin, Chia-Jen Chen, Hsin-Chang Lee
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Publication number: 20220308464Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.Type: ApplicationFiled: July 6, 2021Publication date: September 29, 2022Inventors: Chung-Hsuan LIU, Chen-Yang LIN, Ku-Hsiang SUNG, Da-Wei YU, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
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Patent number: 11430671Abstract: A wafer cleaning module and a method for cleaning a wafer with the wafer cleaning module are disclosed. For example, the wafer cleaning module includes a wafer chuck to hold a wafer, an ozone source to provide ozone gas towards the wafer, and an ultraviolet (UV) lamp module to provide UV light. The UV lamp module includes a UV light source and a rotatable reflector around the UV light source. The rotatable reflector is movable to adjust an amount of UV light directed towards a surface of the wafer.Type: GrantFiled: July 30, 2020Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Yang Lin, Chung-Hsuan Liu, Ku-Hsiang Sung, Kuan-Wen Lin, Chia-Jen Chen, Hsin-Chang Lee
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Publication number: 20220252993Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.Type: ApplicationFiled: April 4, 2022Publication date: August 11, 2022Inventors: Chen-Yang LIN, Da-Wei YU, Li-Hsin WANG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
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Patent number: 11294292Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.Type: GrantFiled: October 30, 2020Date of Patent: April 5, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Yang Lin, Da-Wei Yu, Li-Hsin Wang, Kuan-Wen Lin, Chia-Jen Chen, Hsin-Chang Lee
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Publication number: 20220037171Abstract: A wafer cleaning module and a method for cleaning a wafer with the wafer cleaning module are disclosed. For example, the wafer cleaning module includes a wafer chuck to hold a wafer, an ozone source to provide ozone gas towards the wafer, and an ultraviolet (UV) lamp module to provide UV light. The UV lamp module includes a UV light source and a rotatable reflector around the UV light source. The rotatable reflector is movable to adjust an amount of UV light directed towards a surface of the wafer.Type: ApplicationFiled: July 30, 2020Publication date: February 3, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Yang LIN, Chung-Hsuan LIU, Ku-Hsiang SUNG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
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Patent number: 11079669Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.Type: GrantFiled: December 27, 2019Date of Patent: August 3, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
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Publication number: 20210200107Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.Type: ApplicationFiled: October 30, 2020Publication date: July 1, 2021Inventors: Chen-Yang LIN, Da-Wei YU, Li-Hsin WANG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
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Publication number: 20210072196Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
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Patent number: 10845342Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.Type: GrantFiled: July 27, 2018Date of Patent: November 24, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
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Patent number: 10794872Abstract: A system and method for determining clearance between a fabrication tool and a workpiece is provided. In an exemplary embodiment, the method includes receiving a substrate within a tool such that a gap is defined there between. A transducer disposed on a bottom surface of the substrate opposite the gap provides an acoustic signal that is conducted through the substrate. The transducer also receives a first echo from a top surface of the substrate that defines the gap and a second echo from a bottom surface of the tool that further defines the gap. A width of the gap is measured based on the first echo and the second echo. In some embodiments, the bottom surface of the tool is a bottom surface of a nozzle, and the nozzle provides a liquid or a gas in the gap while the transducer is receiving the first and second echoes.Type: GrantFiled: November 16, 2015Date of Patent: October 6, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
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Publication number: 20200150523Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.Type: ApplicationFiled: December 27, 2019Publication date: May 14, 2020Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
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Patent number: 10520805Abstract: An extreme ultraviolet (EUV) mask having a pellicle disposed thereover is received. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.Type: GrantFiled: July 29, 2016Date of Patent: December 31, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
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Patent number: 10156784Abstract: A method includes directing an acoustically agitated fluid stream at a first surface of a substrate to cause the substrate to vibrate mechanically thereby dislodging contaminant particles on the substrate. The first surface of the substrate is opposite a second surface of the substrate. The second surface of the substrate includes a pattern. An amplitude of the acoustically agitated fluid stream is configured to produce an acoustic response along an entirety of the second surface.Type: GrantFiled: February 5, 2018Date of Patent: December 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
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Publication number: 20180348171Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.Type: ApplicationFiled: July 27, 2018Publication date: December 6, 2018Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
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Publication number: 20180157168Abstract: A method includes directing an acoustically agitated fluid stream at a first surface of a substrate to cause the substrate to vibrate mechanically thereby dislodging contaminant particles on the substrate. The first surface of the substrate is opposite a second surface of the substrate. The second surface of the substrate includes a pattern. An amplitude of the acoustically agitated fluid stream is configured to produce an acoustic response along an entirety of the second surface.Type: ApplicationFiled: February 5, 2018Publication date: June 7, 2018Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin