Patents by Inventor Kuan-Wen Lin

Kuan-Wen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11482717
    Abstract: A dehydrogenation method for hydrogen storage materials, which is executed by a fuel cell system. The fuel cell system includes a hydrogen storage material tank, a heating unit, a fuel cell, a pump, a water thermal management unit and a heat recovery unit. The described dehydrogenation method utilizes the heating unit and the heat recovery unit to provide thermal energy to the hydrogen storage material tank, so that hydrogen storage material is heated to the dehydrogenation temperature. The pump extracts hydrogen from the hydrogen storage material tank, so that the hydrogen storage material is under negative pressure (i.e. H2 absolute pressure below 1 atm), according to which the hydrogen storage material is dehydrogenated, and the dehydrogenation efficiency and the amount of hydrogen release are improved. The method n can reduce the dehydrogenation temperature of the hydrogen storage material, and reduce the thermal energy consumption for heating the hydrogen storage material.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: October 25, 2022
    Inventors: Chia-Chieh Shen, Shih-Hung Chan, Fang-Bor Weng, Ho Chun Cheung, Yi-Hsuan Lin, Mei-Chin Chen, Jyun-Wei Chen, Ya-Che Wu, Han-Wen Liu, Kuan-Lin Chen, Jin-Xun Zhang
  • Publication number: 20220336455
    Abstract: The present disclosure relates to an integrated circuit. In one implementation, the integrated circuit may include a semiconductor substrate; at least one source region comprising a first doped semiconductor material; at least one drain region comprising a second doped semiconductor material; at least one gate formed between the at least one source region and the at least one drain region; and a nanosheet formed between the semiconductor substrate and the at least one gate. The nanosheet may be configured as a routing channel for the at least one gate and may have a first region having a first width and a second region having a second width. The first width may be smaller than the second width.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsiung LIN, Yi-Hsun CHIU, Shang-Wen CHANG, Ching-Wei TSAI, Yu-Xuan HUANG, Kuan-Lun CHENG, Chih-Hao WANG
  • Publication number: 20220308464
    Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.
    Type: Application
    Filed: July 6, 2021
    Publication date: September 29, 2022
    Inventors: Chung-Hsuan LIU, Chen-Yang LIN, Ku-Hsiang SUNG, Da-Wei YU, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
  • Patent number: 11430671
    Abstract: A wafer cleaning module and a method for cleaning a wafer with the wafer cleaning module are disclosed. For example, the wafer cleaning module includes a wafer chuck to hold a wafer, an ozone source to provide ozone gas towards the wafer, and an ultraviolet (UV) lamp module to provide UV light. The UV lamp module includes a UV light source and a rotatable reflector around the UV light source. The rotatable reflector is movable to adjust an amount of UV light directed towards a surface of the wafer.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: August 30, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yang Lin, Chung-Hsuan Liu, Ku-Hsiang Sung, Kuan-Wen Lin, Chia-Jen Chen, Hsin-Chang Lee
  • Publication number: 20220252993
    Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.
    Type: Application
    Filed: April 4, 2022
    Publication date: August 11, 2022
    Inventors: Chen-Yang LIN, Da-Wei YU, Li-Hsin WANG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
  • Patent number: 11393815
    Abstract: The present disclosure relates to an integrated circuit. In one implementation, the integrated circuit may include a semiconductor substrate; at least one source region comprising a first doped semiconductor material; at least one drain region comprising a second doped semiconductor material; at least one gate formed between the at least one source region and the at least one drain region; and a nanosheet formed between the semiconductor substrate and the at least one gate. The nanosheet may be configured as a routing channel for the at least one gate and may have a first region having a first width and a second region having a second width. The first width may be smaller than the second width.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: July 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsiung Lin, Yi-Hsun Chiu, Shang-Wen Chang, Ching-Wei Tsai, Yu-Xuan Huang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11294292
    Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: April 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yang Lin, Da-Wei Yu, Li-Hsin Wang, Kuan-Wen Lin, Chia-Jen Chen, Hsin-Chang Lee
  • Publication number: 20220037171
    Abstract: A wafer cleaning module and a method for cleaning a wafer with the wafer cleaning module are disclosed. For example, the wafer cleaning module includes a wafer chuck to hold a wafer, an ozone source to provide ozone gas towards the wafer, and an ultraviolet (UV) lamp module to provide UV light. The UV lamp module includes a UV light source and a rotatable reflector around the UV light source. The rotatable reflector is movable to adjust an amount of UV light directed towards a surface of the wafer.
    Type: Application
    Filed: July 30, 2020
    Publication date: February 3, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yang LIN, Chung-Hsuan LIU, Ku-Hsiang SUNG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
  • Patent number: 11079669
    Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: August 3, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Publication number: 20210200107
    Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.
    Type: Application
    Filed: October 30, 2020
    Publication date: July 1, 2021
    Inventors: Chen-Yang LIN, Da-Wei YU, Li-Hsin WANG, Kuan-Wen LIN, Chia-Jen CHEN, Hsin-Chang LEE
  • Publication number: 20210072196
    Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 11, 2021
    Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
  • Patent number: 10845342
    Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
  • Patent number: 10794872
    Abstract: A system and method for determining clearance between a fabrication tool and a workpiece is provided. In an exemplary embodiment, the method includes receiving a substrate within a tool such that a gap is defined there between. A transducer disposed on a bottom surface of the substrate opposite the gap provides an acoustic signal that is conducted through the substrate. The transducer also receives a first echo from a top surface of the substrate that defines the gap and a second echo from a bottom surface of the tool that further defines the gap. A width of the gap is measured based on the first echo and the second echo. In some embodiments, the bottom surface of the tool is a bottom surface of a nozzle, and the nozzle provides a liquid or a gas in the gap while the transducer is receiving the first and second echoes.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
  • Publication number: 20200150523
    Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Application
    Filed: December 27, 2019
    Publication date: May 14, 2020
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Patent number: 10520805
    Abstract: An extreme ultraviolet (EUV) mask having a pellicle disposed thereover is received. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Patent number: 10156784
    Abstract: A method includes directing an acoustically agitated fluid stream at a first surface of a substrate to cause the substrate to vibrate mechanically thereby dislodging contaminant particles on the substrate. The first surface of the substrate is opposite a second surface of the substrate. The second surface of the substrate includes a pattern. An amplitude of the acoustically agitated fluid stream is configured to produce an acoustic response along an entirety of the second surface.
    Type: Grant
    Filed: February 5, 2018
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
  • Publication number: 20180348171
    Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.
    Type: Application
    Filed: July 27, 2018
    Publication date: December 6, 2018
    Inventors: Jun-Hao Deng, Kuan-Wen Lin, Sheng-Chi Chin, Yu-Ching Lee
  • Publication number: 20180157168
    Abstract: A method includes directing an acoustically agitated fluid stream at a first surface of a substrate to cause the substrate to vibrate mechanically thereby dislodging contaminant particles on the substrate. The first surface of the substrate is opposite a second surface of the substrate. The second surface of the substrate includes a pattern. An amplitude of the acoustically agitated fluid stream is configured to produce an acoustic response along an entirety of the second surface.
    Type: Application
    Filed: February 5, 2018
    Publication date: June 7, 2018
    Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
  • Patent number: 9885952
    Abstract: A system includes a bracket that is configured to support a photomask and is located at a first side of the photomask; an acoustic energy generator configured to generate acoustic energy, wherein the acoustic energy includes mechanical vibrations of a megasonic frequency and wavelength; and a fluid dispenser coupled to the acoustic energy generator such that the acoustic energy generated by the acoustic energy generator is received by the fluid dispenser to generate an acoustically agitated fluid stream directed at a second side of the photomask, wherein the first side of the photomask is opposite a second side of the photomask, and wherein the first side includes a pattern.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: February 6, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
  • Publication number: 20180031962
    Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Application
    Filed: July 29, 2016
    Publication date: February 1, 2018
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin