Abstract: An organic light emitting diode display is provided. The organic light emitting diode display comprises an organic light emitting diode panel, a quarter-wavelength retarder disposed on the organic light emitting diode panel, a polarizer disposed on the quarter-wavelength retarder, an adhesive layer disposed on the polarizer and a diffraction grating film adhered to the polarizer by the adhesive layer. The diffraction grating film comprises a substrate and a first diffraction grating layer comprising a plurality of first gratings aligned with a first direction disposed on the substrate.

Abstract: An LED lighting device includes a seat, an optical assembly and a light source. The seat has a baseplate and a sidewall. A chamber is formed between the baseplate and the sidewall. The optical assembly completely covers a light-emitting side of the LED lighting device. The light source is disposed in the chamber of the seat and includes multiple LED arrays. Each LED array includes an LED chip. The optical assembly includes an optical unit. The optical unit includes multiple first optical members and multiple second optical members corresponding to the first optical members. The LED arrays correspond to the first optical members. Each first optical member possesses an effect of light diffusion resulting from its own material property. Each second optical member includes one or more sets of optical walls. Each set of optical walls surrounds one of the first optical members.

Abstract: The present invention relates to a method for screening mobile terminal visual attention abnormalities in children based on multimodal data learning. A calibration video and a testing video are set up, and a head-face video of children while watching the calibration video and the testing video on smartphones is recorded, respectively. An eye-tracking estimation model is constructed to predict the fixation point location from the head-face video corresponding to the testing video frame by frame and to extract the eye-tracking features. Facial expression features and head posture features are extracted. A Long Short-Term Memory (LSTM) network is used to fuse different modal features and realize the mapping from multimodal features to category labels. In the testing stage, the head-face video of children to be classified while watching the videos on smartphones is recorded, and the features are extracted and input into the post-training model to determine whether they are abnormal.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.