Patents by Inventor Kuan-Yu Chang
Kuan-Yu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948879Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.Type: GrantFiled: July 27, 2022Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11929418Abstract: A gate structure includes a substrate divided into an N-type transistor region and a P-type transistor region. An interlayer dielectric covers the substrate. A first trench is embedded in the interlayer dielectric within the N-type transistor region. A first gate electrode having a bullet-shaped profile is disposed in the first trench. A gate dielectric contacts the first trench. An N-type work function layer is disposed between the gate dielectric layer and the first gate electrode. A second trench is embedded in the interlayer dielectric within the P-type transistor region. A second gate electrode having a first mushroom-shaped profile is disposed in the second trench. The gate dielectric layer contacts the second trench. The N-type work function layer is disposed between the gate dielectric layer and the second gate electrode. A first P-type work function layer is disposed between the gate dielectric layer and the N-type work function layer.Type: GrantFiled: November 11, 2021Date of Patent: March 12, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Jie-Ning Yang, Wen-Tsung Chang, Po-Wen Su, Kuan-Ying Lai, Bo-Yu Su, Chun-Mao Chiou, Yao-Jhan Wang
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Patent number: 11139165Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: GrantFiled: September 26, 2019Date of Patent: October 5, 2021Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung UniversityInventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Patent number: 11133183Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: GrantFiled: October 7, 2019Date of Patent: September 28, 2021Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung UniversityInventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Patent number: 11133182Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: GrantFiled: September 26, 2019Date of Patent: September 28, 2021Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung UniversityInventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Patent number: 11133184Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: GrantFiled: October 7, 2019Date of Patent: September 28, 2021Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung UniversityInventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Publication number: 20200043726Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: ApplicationFiled: October 7, 2019Publication date: February 6, 2020Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Publication number: 20200043727Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: ApplicationFiled: October 7, 2019Publication date: February 6, 2020Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Publication number: 20200020525Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Publication number: 20200020526Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Patent number: 10504721Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: GrantFiled: April 30, 2015Date of Patent: December 10, 2019Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung UniversityInventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
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Publication number: 20160322460Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.Type: ApplicationFiled: April 30, 2015Publication date: November 3, 2016Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang