Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first mesa side wall that is defined by a side wall of the first conductive semiconductor layer and a side wall of the active layer, and a first mesa surface that is defined by a portion of a top surface of the second conductive semiconductor layer. The first mesa side wall has a side wall bottom end connected to the first mesa surface to form a connection portion, which is constituted of the side wall bottom end and a mesa surface proximal region of the first mesa surface that adjoins the side wall bottom end and is roughened. A method for manufacturing the light-emitting device is also disclosed.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer.