Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A meniscus tear assisted determination system includes an image capturing device and a processor. The image capturing device is for capturing a target protocol of a subject, and the target protocol includes a plurality of target knee joint image sequences. The processor is signally connected to the image capturing device and includes a data preprocessing module and a meniscus tear assisted determination program. The data preprocessing module is for grouping the plurality of target knee joint image sequences and extracting a plurality of target coronal plane image sequences and a plurality of target sagittal plane image sequences. The meniscus tear assisted determination program includes a meniscus location detector and a meniscus tear predictor.

Abstract: A display panel with an anti-Newton ring structure is disclosed. The display panel includes a substrate with an array region and a display region defined thereon. A buffer layer is disposed on the substrate and at least one transistor is formed in the array region. The display panel further includes an anti-Newton ring structure substantially composed of a silicon layer on the buffer layer in the display region, at least one dielectric layer disposed on the anti-Newton ring structure, and a pixel electrode disposed on the dielectric layer in the display region.

Abstract: A display panel with an anti-Newton ring structure is disclosed. The display panel includes a substrate with an array region and a display region defined thereon. A buffer layer is disposed on the substrate and at least one transistor is formed in the array region. The display panel further includes an anti-Newton ring structure substantially composed of a silicon layer on the buffer layer in the display region, at least one dielectric layer disposed on the anti-Newton ring structure, and a pixel electrode disposed on the dielectric layer in the display region.