Abstract: A condenser microphone comprises a substrate, a vibratile diaphragm and a back plate. The substrate has an opening. The diaphragm is disposed corresponding to the substrate and covers the opening, and has a plurality of protrusions. The back plate is coupled to the diaphragm and has a plurality of through holes, at least some of which are corresponding to the protrusions respectively. An interval is formed between the diaphragm and the back plate, and when the diaphragm vibrates, the protrusions move into or further near the through holes.

Abstract: A condenser microphone comprises a substrate, a vibratile diaphragm and a back plate. The substrate has an opening. The diaphragm is disposed corresponding to the substrate and covers the opening, and has a plurality of protrusions. The back plate is coupled to the diaphragm and has a plurality of through holes, at least some of which are corresponding to the protrusions respectively. An interval is formed between the diaphragm and the back plate, and when the diaphragm vibrates, the protrusions move into or further near the through holes.

Abstract: A device for controlling light emissions and a method for fabricating the device are disclosed herein. A quantum well of an active region of a semiconductor device may comprise a quantum structure lattice having lattice geometries that satisfies the Bragg condition, such that inter-quantum structure distance d between a first quantum structure and a second quantum structure within the quantum structure lattice is an integer multiple of a emission half wavelength m?o/2n, where m is an integer, ?o is a wavelength in free space, and n is a refractive index of a cladding material of the quantum well.

Abstract: A condenser microphone comprises a substrate, a vibratile diaphragm and a back plate. The substrate has an opening. The diaphragm is disposed corresponding to the substrate and covers the opening, and has a plurality of protrusions. The back plate is coupled to the diaphragm and has a plurality of through holes, at least some of which are corresponding to the protrusions respectively. An interval is formed between the diaphragm and the back plate, and when the diaphragm vibrates, the protrusions move into or further near the through holes.

Abstract: A condenser microphone comprises a substrate, a vibratile diaphragm and a back plate. The substrate has an opening. The diaphragm is disposed corresponding to the substrate and covers the opening, and has a plurality of protrusions. The back plate is coupled to the diaphragm and has a plurality of through holes, at least some of which are corresponding to the protrusions respectively. An interval is formed between the diaphragm and the back plate, and when the diaphragm vibrates, the protrusions move into or further near the through holes.

Abstract: A device for controlling light emissions and a method for fabricating the device are disclosed herein. A quantum well of an active region of a semiconductor device may comprise a quantum structure lattice having lattice geometries that satisfies the Bragg condition, such that inter-quantum structure distance d between a first quantum structure and a second quantum structure within the quantum structure lattice is an integer multiple of a emission half wavelength m?o/2n, where m is an integer, ?o is a wavelength in free space, and n is a refractive index of a cladding material of the quantum well.

Abstract: An organic solar cell with patterned electrodes comprises a first electrode layer, a second electrode layer and an organic active layer. The first electrode layer and the second electrode layer are arranged opposite to each other. The first electrode layer has a first carrier injection surface having a plurality of first protrusions. The organic active layer is arranged between the first electrode layer and the second electrode layer and has a first surface joined with the first carrier injection surface. The first surface is bonded to the first carrier injection surface to form a first carrier supply interface having a plurality of crests and troughs corresponding to the first protrusions. Thereby is increased the area of the first carrier supply interface, improved the carrier transport efficiency, and promoted the photoelectric conversion efficiency of the solar cell.

Abstract: A metal fuel powered driving system comprises: a cylinder; a piston disposed movably in and cooperating with the cylinder to define a combustion chamber; an arc generating unit including first and second electrodes extending into the combustion chamber, the first electrode being in the form of a first active metal wire; and a first wire supplying unit configured to feed the first active metal wire into the combustion chamber. When the power supplying source applies a voltage to the first and second electrodes, electric arc is generated between the first active metal wire and the second electrode to vaporize and combust the metal wire for driving movements of the piston. A method of driving a piston in a cylinder is also disclosed.

Abstract: Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.

Abstract: Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.

Abstract: Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III–V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.

Abstract: Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.

Abstract: Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.