Abstract: Systems, methods and devices are provided, which can include an engineering change order (ECO) base. A base layout cell includes metal layer regions, conductive gate patterns arranged above metal layer regions; oxide definition (OD) patterns, metal-zero layer over oxide-definition (metal-zero) patterns, at least one cut metal layer (CMD) pattern; and at least one via region. The base layout cell can be implemented in at least two non-identical functional cells. A first functional cell of the at least two non-identical functional cells includes first interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a first layout, and a second functional cell of the at least two non-identical functional cells includes second interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a second layout.

Abstract: A testing assembly for testing a magnetic sensor comprises a testing interface and a detachable magnetic-field generator. The testing interface has a base plate and plurality of testing terminals. The base plate has a first side and a second side opposite to the first side. The plurality of testing terminals is arranged on the first side of the base plate. The detachable magnetic-field generator is arranged on the second side of the base plate in a detachable fashion. The detachable magnetic-field generator has a coil support and at least one coil winding around the coil support.

Abstract: An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.

Abstract: A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: A testing assembly for testing a magnetic sensor comprises a testing interface and a detachable magnetic-field generator. The testing interface has a base plate and plurality of testing terminals. The base plate has a first side and a second side opposite to the first side. The plurality of testing terminals is arranged on the first side of the base plate. The detachable magnetic-field generator is arranged on the second side of the base plate in a detachable fashion. The detachable magnetic-field generator has a coil support and at least one coil winding around the coil support.

Abstract: A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode array disposed in direct contact with the insulating layer. The first electrode array includes a number of first electrodes. Each of the at least one magnetic tunneling junction unit is electrically connected to two neighboring first electrodes of the first electrode array to form a current-in-plane tunneling conduction mode.

Abstract: A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.

Abstract: A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode array disposed in direct contact with the insulating layer. The first electrode array includes a number of first electrodes. Each of the at least one magnetic tunneling junction unit is electrically connected to two neighboring first electrodes of the first electrode array to form a current-in-plane tunneling conduction mode.

Abstract: A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.

Abstract: A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: A magnetoresistance sensing device includes a substrate, a magnetoresistance sensing unit, and a magnetic field adjusting unit. In response to a first external magnetic field horizontal to a surface of the substrate, the magnetoresistance sensing unit results in a change of an electrical resistance. The magnetic field adjusting unit is used for changing a direction of a second external magnetic field vertical to the surface of the substrate to be consistent with the first external magnetic field, so that the magnetoresistance sensing unit results in a change of the electrical resistance in response to the second external magnetic field. A magnetoresistance sensor includes four magnetoresistance sensing devices, which are arranged in a Wheatstone bridge. An output voltage of the Wheatstone bridge is not altered as the first external magnetic field is changed, but the output voltage of the Wheatstone bridge is altered as the second external magnetic field is changed.

Abstract: A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.

Abstract: A spin-valve magnetoresistance structure includes a first magnetoresistance layer having a fixed first magnetization direction, a second magnetoresistance layer disposed on a side of the first magnetoresistance layer and having a variable second magnetization direction, and a spacer disposed between the first magnetoresistance layer and the second magnetoresistance layer. The second magnetization direction is at an angle in a range from 30 to 60 degrees or from 120 to 150 degrees to the first magnetization direction when the intensity of an applied external magnetic field is zero. The second magnetization direction varies with the external magnetic field thereby changing an electrical resistance of the spin-valve magnetoresistance structure. A spin-valve magnetoresistance sensor based on the spin-valve magnetoresistance structure is also provided.