Patents by Inventor Kuang-Hao Lee

Kuang-Hao Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120410
    Abstract: A semiconductor structure includes a semiconductor epitaxial layer, a first semiconductor well, a second semiconductor well, a source doped region, a gate structure and a drain structure. The semiconductor epitaxial layer includes a first side and a second side opposite to the first side. The first semiconductor well is located on the first side of the semiconductor epitaxial layer. The second semiconductor well is located on the second side of the semiconductor epitaxial layer. The source doped region is located in the first semiconductor well. The gate structure overlaps the first semiconductor well and the source doped region on the first side of the semiconductor epitaxial layer. The drain structure includes a semiconductor substrate. The second side of the semiconductor epitaxial layer outside the second semiconductor well includes a connecting surface. The connecting surface of the semiconductor epitaxial layer is connected to the semiconductor substrate.
    Type: Application
    Filed: February 16, 2023
    Publication date: April 11, 2024
    Inventors: Yu-Tsu LEE, Yan-Ru CHEN, Chao-Yi CHANG, Kuang-Hao CHIANG
  • Publication number: 20240120411
    Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.
    Type: Application
    Filed: February 17, 2023
    Publication date: April 11, 2024
    Inventors: Yu-Tsu LEE, Yan-Ru CHEN, Liang-Ming LIU, Kuang-Hao CHIANG
  • Publication number: 20210152078
    Abstract: A portable voltage converter comprises a casing, an AC input and an AC output, and a voltage conversion circuitry; the AC input is connected to the voltage conversion circuitry, the input voltage is convened by the voltage conversion circuitry and connected to the AC output; the voltage conversion circuitry includes a low power voltage conversion circuitry and a high power voltage conversion circuitry; the low power voltage conversion circuitry has a core transformer, the operating current circuitry includes a current overload protector, the voltage waveform after voltage conversion is called the first waveform. The high power voltage conversion circuitry has a TRIAC, the voltage waveform after voltage conversion is called the second waveform. When the required power for the connected external load is high, the current overload protector reduces the output of the first waveform, so that the second waveform is actuated and output.
    Type: Application
    Filed: November 18, 2019
    Publication date: May 20, 2021
    Inventor: KUANG-HAO LEE
  • Patent number: 8157578
    Abstract: An universal plug adapter with multiple retractable pin plugs, comprising: a main body, at least a set of pin plug, an orientation guide rod allowing sliding of pin plug and a slide block restricting the shift of pin plug; the pin plug comprises of at least a pair of pins of international standard size, of which a single pin plug can be pushed every time; a sliding groove is set laterally onto the slide block; the groove is deep upwards and shallow downwards; the pin plug is provided with a bulge; when the pin plug is pushed, the bulge moves along the groove of the slide block groove; given the different depth of the groove, the bulge pushes the slide block to shift, such that the bulges on other pin plug cannot be aligned with the center of the groove, so other pin plugs not yet pushed are restricted in original position.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: April 17, 2012
    Inventor: Kuang-Hao Lee
  • Publication number: 20100311261
    Abstract: A universal plug adapter, comprising: a main body, at least a set of plug pins, an orientation guide rod allowing sliding of pins and a slide block restricting the shift of pins; the plug pin comprises of at least two pins of different sizes, of which a single pin can be pushed every time; a sliding groove is set laterally onto the slide block; the groove is deep upwards and shallow downwards; the pin is provided with a bulge; when the pin is pushed, the bulge moves along the groove of the slide block groove; given the different depth of the groove, the bulge pushes the slide block to shift, such that the bulges on other pins cannot be aligned with the center of the groove, so other pins not yet pushed are restricted in original position.
    Type: Application
    Filed: May 13, 2010
    Publication date: December 9, 2010
    Inventor: Kuang-Hao Lee
  • Patent number: D864863
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: October 29, 2019
    Inventor: Kuang-Hao Lee