Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: A motor-operated traction device includes an actuator consisting of a DC motor and a worm shaft assembly and controlled by a controller to reciprocate a rocker arm causing a horizontal pull rod to pull a waist harness and a neck harness so as to apply traction to the patient's spine.

Abstract: A physical traction machine has two U-shaped brackets connected in parallel with a telescopic rod vertically attached thereto at the middle for carrying a traction device to pull a patient's neck or waist for relieving pressure from cervical vertebrae or lumbar vertebrae. An adjusting device is attached to the first U-shaped bracket for adjusting its width. Another adjusting device is attached to the second U-shaped bracket for adjusting its height.