Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: In various embodiments, an assembly for handling a semiconductor die is provided. The assembly may include a carrier with a surface. The assembly may also include an adhesive tape fixed to the surface of the carrier. The adhesive tape may be configured to adhere to the semiconductor die. The adhesive tape may include adhesive, the adhesion of which can be reduced by means of electromagnetic waves. The assembly may further include an electromagnetic source configured to apply electromagnetic waves to the adhesive tape to reduce adhesion of the adhesive tape to the semiconductor die. The assembly may additionally include a die pick-up component configured to pick up the semiconductor die from the adhesive tape.

Abstract: In various embodiments, an assembly for handling a semiconductor die is provided. The assembly may include a carrier with a surface. The assembly may also include an adhesive tape fixed to the surface of the carrier. The adhesive tape may be configured to adhere to the semiconductor die. The adhesive tape may include adhesive, the adhesion of which can be reduced by means of electromagnetic waves. The assembly may further include an electromagnetic source configured to apply electromagnetic waves to the adhesive tape to reduce adhesion of the adhesive tape to the semiconductor die. The assembly may additionally include a die pick-up component configured to pick up the semiconductor die from the adhesive tape.