Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.

Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: An ultraviolet (UV) lamp assembly of a UV curing tool is provided for curing a low dielectric constant (low-k) material layer of a semiconductor wafer. The UV lamp assembly includes: a UV lamp which emits UV light; a first reflector arranged proximate to a first side of the UV lamp, the first reflector including a first surface facing the UV lamp from which UV light emitted by the UV lamp is at least partially reflected; and a UV reflective coating partially coating the first surface of the reflector. Suitably, a plurality of areas of the first surface of the reflector remain uncoated with the UV reflective coating and the plurality of uncoated areas are arranged to promote a uniform exposure of the semiconductor wafer to UV irradiation.

Abstract: An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.

Abstract: An ultraviolet (UV) lamp assembly of a UV curing tool is provided for curing a low dielectric constant (low-k) material layer of a semiconductor wafer. The UV lamp assembly includes: a UV lamp which emits UV light; a first reflector arranged proximate to a first side of the UV lamp, the first reflector including a first surface facing the UV lamp from which UV light emitted by the UV lamp is at least partially reflected; and a UV reflective coating partially coating the first surface of the reflector. Suitably, a plurality of areas of the first surface of the reflector remain uncoated with the UV reflective coating and the plurality of uncoated areas are arranged to promote a uniform exposure of the semiconductor wafer to UV irradiation.

Abstract: A method of curing or otherwise processing semiconductor wafers in an environmentally controlled process chamber includes: loading a plurality of semiconductor wafers into the process chamber such that pairs of adjacent semiconductor wafers are spaced apart from one another by gaps therebetween; introducing a process gas into the process chamber containing the plurality of semiconductor wafers; and drawing gas from the process chamber through one or more exhaust manifolds. Suitably, each exhaust manifold includes a plurality of inlet orifices through which gas is drawn into the exhaust manifold, at least one of the inlet orifices facing and aligning with each of the gaps.

Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.

Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: A first semiconductor device and a second semiconductor device may be directly bonded using heterogeneous bonding layers. A first bonding layer may be formed on the first semiconductor device and the second bonding layer may be formed on the second semiconductor device. The first bonding layer may include a higher concentration of hydroxy-containing silicon relative to the second bonding layer. The second bonding layer may include silicon with a higher concentration of nitrogen relative to the first bonding layer. An anneal may be performed to cause a dehydration reaction that results in decomposition of the hydroxy components of the first bonding layer, which forms silicon oxide bonds between the first bonding layer and the second bonding layer. The nitrogen in the second bonding layer increases the effectiveness of the dehydration reaction and the effectiveness and strength of the bond between the first bonding layer and the second bonding layer.

Abstract: A method of fabricating semiconductor devices includes: loading one or more semiconductor wafers into a plurality of stations provided within a process chamber; applying a process to the semiconductor wafers which deposits a material on the one or more semiconductor wafers within the process chamber; and cleaning the process chamber. Suitably, cleaning the process chamber includes flowing a cleaning gas into the process chamber toward a deflector arranged in the process chamber, the deflector having a first surface upon which the flowed cleaning gas impinges, the first surface directing a first portion of the flowed cleaning gas impinging thereon in a first trajectory toward a first end of the process chamber and directing a second portion of the flowed cleaning gas impinging thereon in a second trajectory toward a second end of the process chamber, the second end being opposite the first end.

Abstract: Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.

Abstract: The present disclosure relates to systems and methods for reducing the humidity within a FOUP (Front Opening Unified Pod) when loaded on an EFEM (Equipment Front End Module) for transfer of a semiconductor wafer substrate during fabrication processes. A deflector of specified structure is placed inside the EFEM above the load port of the FOUP. The deflector directs airflow in the EFEM away from the load port. The deflector includes a body with a plurality of apertures in the deflector body, and with a sloped front surface. Thus, the degree of penetration of high-humidity air from the EFEM into the FOUP is reduced.

Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.

Abstract: Systems and methods for reducing obstructions in an exhaust line of a sub-atmospheric chemical vapor deposition (SACVD) system are disclosed. Such obstruction may occur due to the reaction of a silicon precursor with ozone, which forms solid particles in the exhaust line. A catalytic apparatus is provided which catalyzes the decomposition of ozone (O3) to oxygen (O2). Due to the lower reactivity of O2, the formation of solid particles is reduced.

Abstract: A first semiconductor device and a second semiconductor device may be directly bonded using heterogeneous bonding layers. A first bonding layer may be formed on the first semiconductor device and the second bonding layer may be formed on the second semiconductor device. The first bonding layer may include a higher concentration of hydroxy-containing silicon relative to the second bonding layer. The second bonding layer may include silicon with a higher concentration of nitrogen relative to the first bonding layer. An anneal may be performed to cause a dehydration reaction that results in decomposition of the hydroxy components of the first bonding layer, which forms silicon oxide bonds between the first bonding layer and the second bonding layer. The nitrogen in the second bonding layer increases the effectiveness of the dehydration reaction and the effectiveness and strength of the bond between the first bonding layer and the second bonding layer.

Abstract: A chamber of a semiconductor fabrication facility may include a vent port diffuser. The vent port diffuser may include a first tube member configured to couple the vent port diffuser to a vent port of the chamber. The vent port diffuser may include a second tube member coupled to the first tube member. The second tube member may comprise a plurality of openings spaced along a length of the second tube member, with the plurality of openings configured to receive a fluid from the chamber. Based on the semiconductor fabrication facility including the vent port diffuser, the chamber may be configured to provide an improved flow field of a fluid within the chamber. In this way, the vent port diffuser may reduce defects of semiconductor devices transported through the chamber that might otherwise be caused by contaminants.

Abstract: A method of fabricating a semiconductor device is described. A semiconductor substrate having at least one electrical component is provided. A patterned wiring layer is formed above the semiconductor substrate. The patterned wiring layer includes a plurality of wiring portions, where adjacent of the wiring portions are separated from each other. A first insulating passivation layer is formed over the wiring portions in a region between adjacent wiring portions. The first insulating passivation layer has a horizontal surface in the region between adjacent wiring portions. A second insulating passivation layer is formed on the first insulating passivation layer, wherein the first insulating passivation layer has a side surface which makes an angle with the horizontal surface of greater than 103°.

Abstract: A semiconductor device may include one or more low dielectric constant (low-?) layers on a substrate. The semiconductor device may include a dielectric layer on the one or more low-? layers. The semiconductor device may include a structure through the substrate, the one or more low-? layers, and the dielectric layer. The semiconductor device may include a liner layer between the structure and the substrate, between the structure and the one or more low-? layers, and between the structure and the dielectric layer. The semiconductor device may include a capping layer between the liner layer and the dielectric layer and between the liner layer and the one or more low-? layers.

Abstract: A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.