Patents by Inventor KUCHANURI SUBHASH

KUCHANURI SUBHASH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing semiconductor device
    Patent number: 10325898
    Abstract: A semiconductor device includes a first active pattern extending in a first direction on a first region and a second region of a substrate, a first dummy gate electrode extending in a second direction crossing the first active pattern between the first region and the second region, a contact structure contacting the first dummy gate electrode and extending in the first direction, and a power line disposed on the contact structure and electrically connected to the contact structure. The power line extends in the first direction. The contact structure overlaps with the power line when viewed in a plan view.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: June 18, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sharma Deepak, Rajeev Ranjan, Kuchanuri Subhash, Chulhong Park, Jaeseok Yang, Kwanyoung Chun
  • Integrated circuit devices
    Patent number: 10249605
    Abstract: An integrated circuit (IC) device includes at least one standard cell. The at least one standard cell includes: first and second active regions respectively disposed on each of two sides of a dummy region, the first and second active regions having different conductivity types and extending in a first direction; first and second gate lines extending parallel to each other in a second direction perpendicular to the first direction across the first and second active regions, a first detour interconnection structure configured to electrically connect the first gate line with the second gate line; and a second detour interconnection structure configured to electrically connect the second gate line with the first gate line. The first and second detour interconnection structures include a lower interconnection layer extending in the first direction, an upper interconnection layer extending in the second direction, and a contact via.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: April 2, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kuchanuri Subhash, Rastogi Sidharth, Deepak Sharma, Chul-hong Park, Jae-seok Yang
  • INTEGRATED CIRCUIT DEVICES
    Publication number: 20180158811
    Abstract: An integrated circuit (IC) device includes at least one standard cell. The at least one standard cell includes: first and second active regions respectively disposed on each of two sides of a dummy region, the first and second active regions having different conductivity types and extending in a first direction; first and second gate lines extending parallel to each other in a second direction perpendicular to the first direction across the first and second active regions, a first detour interconnection structure configured to electrically connect the first gate line with the second gate line; and a second detour interconnection structure configured to electrically connect the second gate line with the first gate line. The first and second detour interconnection structures include a lower interconnection layer extending in the first direction, an upper interconnection layer extending in the second direction, and a contact via.
    Type: Application
    Filed: July 20, 2017
    Publication date: June 7, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kuchanuri Subhash, Rastogi Sidharth, Deepak Sharma, Chul-hong Park, Jae-seok Yang
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20180130786
    Abstract: A semiconductor device includes a first active pattern extending in a first direction on a first region and a second region of a substrate, a first dummy gate electrode extending in a second direction crossing the first active pattern between the first region and the second region, a contact structure contacting the first dummy gate electrode and extending in the first direction, and a power line disposed on the contact structure and electrically connected to the contact structure. The power line extends in the first direction. The contact structure overlaps with the power line when viewed in a plan view.
    Type: Application
    Filed: June 28, 2017
    Publication date: May 10, 2018
    Inventors: SHARMA DEEPAK, RAJEEV RANJAN, KUCHANURI SUBHASH, CHULHONG PARK, JAESEOK YANG, KWANYOUNG CHUN