Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: An alignment structure for a semiconductor device and a method of forming same are provided. A method includes forming an isolation region over a substrate and forming an alignment structure over the isolation region. Forming the alignment structure includes forming a sacrificial gate electrode layer over the substrate and the isolation region. The sacrificial gate electrode layer is patterned to form a plurality of first sacrificial gates over the isolation region. At least one of the plurality of first sacrificial gates is reshaped. The at least one of the plurality of first sacrificial gates is disposed at an edge of the alignment structure in a plan view. A sidewall of the at least one of the plurality of first sacrificial gates comprises a notch at an interface between the at least one of the plurality of first sacrificial gates and the isolation region.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Abstract: A device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. A gate structure is disposed over the fin structures. The gate structure extends in a second direction in the top view. The second direction is different from the first direction. The fin structures have a fin pitch equal to a sum of: a dimension of one of the fin structures in the second direction and a distance between an adjacent pair of the fin structures in the second direction. An end segment of the gate structure extends beyond an edge of a closest one of the fin structures in the second direction. The end segment has a tapered profile in the top view or is at least 4 times as long as the fin pitch in the second direction.

Abstract: A method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to form a first trench and a second trench, respectively, forming an etching mask, wherein the etching mask fills the first trench and the second trench, patterning the etching mask to remove the etching mask from the first trench, removing a first dummy gate dielectric of the first dummy gate stack, with the etching mask protecting a second dummy gate dielectric of the second dummy gate stack from being removed, and forming a first replacement gate stack and a second replacement gate stack in the first trench and the second trench, respectively.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate over the fin; reducing a thickness of a lower portion of the dummy gate proximate to the isolation regions, where after reducing the thickness, a distance between opposing sidewalls of the lower portion of the dummy gate decreases as the dummy gate extends toward the isolation regions; after reducing the thickness, forming a gate fill material along at least the opposing sidewalls of the lower portion of the dummy gate; forming gate spacers along sidewalls of the dummy gate and along sidewalls of the gate fill material; and replacing the dummy gate with a metal gate.

Abstract: The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.

Abstract: The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.

Abstract: A semiconductor device includes a fin extending from a substrate and including a first fin end, a separation structure separating the first fin end from an adjacent fin end of another fin, a dummy gate spacer along sidewalls of the separation structure and the fin, a first epitaxial source/drain region in the fin and adjacent the separation structure, and a residue of a dummy gate material in a corner region between the dummy gate spacer and the first fin end. The first fin end protrudes from the dummy gate spacer into the separation structure. The residue of the dummy gate material separates the first epitaxial source/drain region from the separation structure and is triangle shaped.

Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.

Abstract: A remote Bluetooth communication system of the present invention comprises a Bluetooth gateway, a Bluetooth device, a cloud virtual device and a Bluetooth application program. The Bluetooth device is configured in a service area of the Bluetooth gateway. The cloud virtual device further includes a Bluetooth virtual layer module and a communication module. The Bluetooth virtual layer module is configured for providing a Bluetooth interface. The communication module is configured for establishing a network communication with the Bluetooth gateway. The Bluetooth application program is executed on the cloud virtual device for controlling the Bluetooth device in the service area of the Bluetooth gateway in the service area of the Bluetooth gateway through the Bluetooth interface provided by the Bluetooth virtual layer module. The invention can solve the problems of consuming the network traffic, memory space and resources of mobile phone processor.

Abstract: The present invention provides an interactive physiology monitoring and sharing system to be used in a social media. The present invention comprises a Bluetooth physiological sensor and a server. The Bluetooth physiological sensor is used for sensing and sending a physiological data. The server is connected to the social media and the Bluetooth physiological sensor for receiving the physiological data. An agent is pre-stored in the server. Wherein, when the server receives a user message from the social media, the agent analyzes the user message and the physiological data to generate and send a feedback message to the social media. Through the social media and the agent, users can easily share their health status and receive health advice without wasting medical resources.

Abstract: A method for establishing and monitoring a Bluetooth low energy wireless network comprises the following steps. A first Bluetooth wireless device in the plurality of Bluetooth low energy wireless devices is controlled from a broadcast state into a detection state. In the detection state, the first Bluetooth wireless device receives a first connectable broadcast signal transmitted from a second Bluetooth wireless devices of the Bluetooth low energy wireless device. The first Bluetooth wireless device establishes a first Bluetooth connection with the second Bluetooth wireless device according to the first connection request. A trigger instruction is transmitted from the first Bluetooth wireless device to the second Bluetooth wireless device via the first Bluetooth connection, in order to control the second Bluetooth wireless device to enter into a detection state.

Abstract: A Bluetooth data access system comprises a Bluetooth device, a Bluetooth gateway, and an application server. The Bluetooth gateway receives a service code from the Bluetooth device and sends the service code to the application server for getting an application able to communicate with the Bluetooth device. Then, the Bluetooth gateway controls or accesses the Bluetooth device through the application. Compared with the prior art, a Bluetooth gateway of the prior art requires a built-in application of the Bluetooth device to control the Bluetooth device. The present invention utilizes the application server to provide a corresponding application to the Bluetooth gateway based on the different Bluetooth device, so that the gateway can dynamically control or access various Bluetooth devices without the built-in application.

Abstract: A personalized advertising system for sending personalized advertisements to a user comprises a positioning device, a track database, a customer database, a preference learning module and a personalized advertising module. The positioning device calculates a moving trajectory according to the wireless signal sent by a mobile device of the user and stores the moving trajectory in the track database. The customer database stores a shopping profile of the user. The preference learning module generates a predicted shopping preference information for the user according to the moving trajectory and the shopping profile. The personalized advertising module sends a personalized advertising message to the user according to the predicted shopping preference information. Compared with the prior art, the system of the present invention utilizes the location tracking technology to detect the behavior of the user in the store, and sends the appropriate advertisements to the user by automatic preference learning.

Abstract: A method for establishing and monitoring a Bluetooth low energy wireless network comprises the following steps. A first Bluetooth wireless device in the plurality of Bluetooth low energy wireless devices is controlled from a broadcast state into a detection state. In the detection state, the first Bluetooth wireless device receives a first connectable broadcast signal transmitted from a second Bluetooth wireless devices of the Bluetooth low energy wireless device. The first Bluetooth wireless device establishes a first Bluetooth connection with the second Bluetooth wireless device according to the first connection request. A trigger instruction is transmitted from the first Bluetooth wireless device to the second Bluetooth wireless device via the first Bluetooth connection, in order to control the second Bluetooth wireless device to enter into a detection state.

Abstract: The present invention relates to a smart ticket automatically matching system, and more particularly, to a system that can automatically match the ticket on the electrical carrier of the user according to different ticket transaction devices, so that the user can automatically process the transaction procedure through the successful matching result or the user is provided to automatically filter out the ticket on the ticket electrical carrier, and is informed of the quantity and kinds of the allowable tickets to process further transaction.

Abstract: A fuel cell stack including a first end plate, a second end plate, at least a fuel cell, a first current collector and a second current collector is provided. The first end plate includes a first end plate structure component, which is combined with a first end plate manifold component. The second end plate includes a second end plate structure component, which is combined with a second end plate manifold component. The first and the second end plate manifold components are placed between the first and the second end plate structure components, while the fuel cell is disposed between the first and the second end plate manifold components. The first current collector is disposed between the first end plate manifold component and the fuel cell. The second current collector is disposed between the second end plate manifold component and the fuel cell.

Abstract: A fuel cell stack including a first end plate, a second end plate, at least a fuel cell, a first current collector and a second current collector is provided. The first end plate includes a first end plate structure component, which is combined with a first end plate manifold component. The second end plate includes a second end plate structure component, which is combined with a second end plate manifold component. The first and the second end plate manifold components are placed between the first and the second end plate structure components, while the fuel cell is disposed between the first and the second end plate manifold components. The first current collector is disposed between the first end plate manifold component and the fuel cell. The second current collector is disposed between the second end plate manifold component and the fuel cell.