Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The method includes removing a first semiconductor layer disposed between a second semiconductor layer and a third semiconductor layer and performing an oxide refill process to form a seamless dielectric material between the second and third semiconductor layers. The oxide refill process includes exposing the second and third semiconductor layers to a silicon-containing precursor at a first flow rate for a first duration to form a monolayer, and exposing the monolayer to an oxygen-containing precursor at a second flow rate for a second duration to form the seamless dielectric material, the second flow rate is about twice to about 20 times the first flow rate, and the second duration is about twice to about 20 times the first duration.

Abstract: A semiconductor device includes a substrate, a first active structure, a second active structure, a wall and a STI layer. The first active structure is formed on the substrate. The second active structure is formed on the substrate. The wall is formed between the first active structure and the second active structure. The STI layer is formed adjacent to the first active structure and has an upper surface. A distance between a spacer of the first active structure and the upper surface of the STI layer may range between 0 and 50 nanometers.

Abstract: A post-deposition treatment can be applied to an atomic layer deposition (ALD)-deposited film to seal one or more seams at the surface. The seam-top treatment can physically merge the two sides of the seam, so that the surface behaves as a continuous material to allow etching at a substantially uniform rate across the surface of the film. The seam-top treatment can be used to merge seams in ALD-deposited films within semiconductor structures, such as gate-all-around field effect transistors (GAAFETs).

Abstract: A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.

Abstract: Provided is a sun protection material including a plurality of polystyrene microspheres and a plurality of refractive layers. The polystyrene microspheres have a particle size of 150 nm to 300 nm. Surfaces of the polystyrene microspheres are at least partially covered by the refractive layers. The sun protection material can scatter a light in a wavelength range between 250 nm and 400 nm. A sun protection composition containing the sun protection material also may scatter a light of a wavelength range between 250 nm and 400 nm, such that the UV protection of the sun protection composition is enhanced.