Abstract: A post-deposition treatment can be applied to an atomic layer deposition (ALD)-deposited film to seal one or more seams at the surface. The seam-top treatment can physically merge the two sides of the seam, so that the surface behaves as a continuous material to allow etching at a substantially uniform rate across the surface of the film. The seam-top treatment can be used to merge seams in ALD-deposited films within semiconductor structures, such as gate-all-around field effect transistors (GAAFETs).

Abstract: A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.

Abstract: Provided is a sun protection material including a plurality of polystyrene microspheres and a plurality of refractive layers. The polystyrene microspheres have a particle size of 150 nm to 300 nm. Surfaces of the polystyrene microspheres are at least partially covered by the refractive layers. The sun protection material can scatter a light in a wavelength range between 250 nm and 400 nm. A sun protection composition containing the sun protection material also may scatter a light of a wavelength range between 250 nm and 400 nm, such that the UV protection of the sun protection composition is enhanced.