Patents by Inventor Kuei-Pin Lee
Kuei-Pin Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240076422Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.Type: ApplicationFiled: September 1, 2023Publication date: March 7, 2024Inventors: Jing-Cherng TSAI, Jen-Long WU, Wen-Hao KANG, Kuei-Pin LIN, Jing-Yu LEE, Jun-Ye HONG, Zih-Yu SHIH, Cheng-Hung CHIANG, Gang-Wei SHEN, Yu-Chuan SUNG, Chung-Hua WENG, Hsing-Ya CHEN
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Patent number: 11177168Abstract: A method includes forming a trench in a low-K dielectric layer, where the trench exposes an underlying contact area of a substrate. A first tantalum nitride (TaN) layer is conformally deposited within the trench, where the first TaN layer is deposited using atomic layer deposition (ALD) or chemical vapor deposition (CVD). A tantalum (Ta) layer is deposited on the first TaN layer conformally within the trench, where the Ta layer is deposited using physical vapor deposition (PVD). An electroplating process is performed to deposit a conductive layer over the Ta layer. A via is formed over the conductive layer, where forming the via includes depositing a second TaN layer within the via and in contact with the conductive layer.Type: GrantFiled: April 29, 2019Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Lien Lee, Hung-Wen Su, Kuei-Pin Lee, Yu-Hung Lin, Yu-Min Chang
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Publication number: 20190252247Abstract: A method includes forming a trench in a low-K dielectric layer, where the trench exposes an underlying contact area of a substrate. A first tantalum nitride (TaN) layer is conformally deposited within the trench, where the first TaN layer is deposited using atomic layer deposition (ALD) or chemical vapor deposition (CVD). A tantalum (Ta) layer is deposited on the first TaN layer conformally within the trench, where the Ta layer is deposited using physical vapor deposition (PVD). An electroplating process is performed to deposit a conductive layer over the Ta layer. A via is formed over the conductive layer, where forming the via includes depositing a second TaN layer within the via and in contact with the conductive layer.Type: ApplicationFiled: April 29, 2019Publication date: August 15, 2019Inventors: Ya-Lien LEE, Hung-Wen SU, Kuei-Pin LEE, Yu-Hung LIN, Yu-Min CHANG
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Patent number: 10276431Abstract: A device comprises a semiconductor substrate; a dielectric layer deposited over the semiconductor substrate, the dielectric layer including a trench; and a structure in the trench. The structure includes a chemical vapor deposition (CVD) TaN layer formed on a side wall of the trench; a physical vapor deposition (PVD) Ta layer formed over the CVD TaN layer; and a metal-containing layer formed over the PVD Ta layer.Type: GrantFiled: February 12, 2018Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Lien Lee, Hung-Wen Su, Kuei-Pin Lee, Yu-Hung Lin, Yu-Min Chang
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Publication number: 20180174898Abstract: A device comprises a semiconductor substrate; a dielectric layer deposited over the semiconductor substrate, the dielectric layer including a trench; and a structure in the trench. The structure includes a chemical vapor deposition (CVD) TaN layer formed on a side wall of the trench; a physical vapor deposition (PVD) Ta layer formed over the CVD TaN layer; and a metal-containing layer formed over the PVD Ta layer.Type: ApplicationFiled: February 12, 2018Publication date: June 21, 2018Inventors: Ya-Lien Lee, Hung-Wen Su, Kuei-Pin Lee, Yu-Hung Lin, Yu-Min Chang
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Patent number: 9892963Abstract: A method of fabricating an integrated circuit includes depositing a cap layer on a substrate; depositing a dielectric layer on the cap layer; and forming a trench in the dielectric layer. The method further includes depositing a tantalum nitride (TaN) layer on a sidewall of the trench such that the TaN layer has a greater concentration of nitrogen than tantalum. The method further includes depositing a tantalum (Ta) layer on the TaN layer using physical vapor deposition (PVD); and depositing a metal layer over the Ta layer.Type: GrantFiled: October 9, 2015Date of Patent: February 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Lien Lee, Hung-Wen Su, Kuei-Pin Lee, Yu-Hung Lin, Yu-Min Chang
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Publication number: 20160111327Abstract: A method of fabricating an integrated circuit includes depositing a cap layer on a substrate; depositing a dielectric layer on the cap layer; and forming a trench in the dielectric layer. The method further includes depositing a tantalum nitride (TaN) layer on a sidewall of the trench such that the TaN layer has a greater concentration of nitrogen than tantalum. The method further includes depositing a tantalum (Ta) layer on the TaN layer using physical vapor deposition (PVD); and depositing a metal layer over the Ta layer.Type: ApplicationFiled: October 9, 2015Publication date: April 21, 2016Inventors: Ya-Lien Lee, Hung-Wen Su, Kuei-Pin Lee, Yu-Hung Lin, Yu-Min Chang
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Patent number: 9159666Abstract: A structure for an integrated circuit includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the cap layer, and a trench embedded in the dielectric layer. The trench includes a TaN layer deposited on a side wall of the trench wherein the TaN layer has a greater concentration of nitrogen than tantalum, a Ta layer deposited on the TaN layer, and a Cu deposited on the Ta layer. The structure further includes a via integrated into the trench at bottom of the filled trench. In an embodiment, both the TaN layer and the Ta layer are formed with physical vapor deposition (PVD) wherein the TaN layer is formed with plasma sputtering a Ta target with an N2 flow at least 20 sccm.Type: GrantFiled: May 23, 2014Date of Patent: October 13, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Lien Lee, Hung-Wen Su, Yu-Hung Lin, Kuei-Pin Lee, Yu-Min Chang
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Patent number: 9064934Abstract: A device and a method of forming the device is provided. The device includes a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.Type: GrantFiled: September 24, 2014Date of Patent: June 23, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, Chi-Yu Chou, Kuei-Pin Lee, Chen-Kuang Lien, Yu-Chang Hsiao, Yao Hsiang Liang, Yu-Min Chang
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Publication number: 20150044867Abstract: A device and a method of forming the device is provided. The device includes a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.Type: ApplicationFiled: September 24, 2014Publication date: February 12, 2015Inventors: Yu-Hung Lin, Chi-Yu Chou, Kuei-Pin Lee, Chen-Kuang Lien, Yu-Chang Hsiao, Yao Hsiang Liang, Yu-Min Chang
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Publication number: 20140332962Abstract: A structure for an integrated circuit with reduced contact resistance is disclosed. The structure includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the cap layer, and a trench embedded in the dielectric layer. The trench includes a TaN layer deposited on a side wall of the trench wherein the TaN layer has a greater concentration of nitrogen than tantalum, a Ta layer deposited on the TaN layer, and a Cu deposited on the Ta layer. The structure further includes a via integrated into the trench at bottom of the filled trench. In an embodiment, both the TaN layer and the Ta layer are formed with physical vapor deposition (PVD) wherein the TaN layer is formed with plasma sputtering a Ta target with an N2 flow at least 20 sccm. The structure offers low contact resistance (Rc) and tight Rc distribution.Type: ApplicationFiled: May 23, 2014Publication date: November 13, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Lien Lee, Hung-Wen Su, Yu-Hung Lin, Kuei-Pin Lee, Yu-Min Chang
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Patent number: 8872342Abstract: A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.Type: GrantFiled: March 11, 2014Date of Patent: October 28, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, Chi-Yu Chou, Kuei-Pin Lee, Chen-Kuang Lien, Yu-Chang Hsiao, Yao-Hsiang Liang, Yu-Min Chang
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Patent number: 8778801Abstract: A seed layer comprises a bottom seed layer portion formed on the bottom of a via opening, a sidewall seed layer portion formed on an upper portion of the sidewall of the via opening and a corner seed layer portion formed between the bottom seed layer portion and the sidewall seed layer portion. The sidewall seed layer portion is of a first thickness. The corner seed layer portion is of a second thickness and the second thickness is greater than the first thickness.Type: GrantFiled: September 21, 2012Date of Patent: July 15, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Bin Chiang, Hung-Chih Wang, Kuei-Pin Lee, Chi-Yu Chou, Yao Hsiang Liang
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Publication number: 20140191402Abstract: A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.Type: ApplicationFiled: March 11, 2014Publication date: July 10, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, Chi-Yu Chou, Kuei-Pin Lee, Chen-Kuang Lien, Yu-Chang Hsiao, Yao-Hsiang Liang, Yu-Min Chang
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Patent number: 8722531Abstract: A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming a metal-containing layer in the dielectric layer, forming a barrier layer overlying the metal-containing layer, and performing a thermal process to form a metal oxide layer underlying the conductive layer. The metal oxide layer is a barrier layer formed at the boundary between the dielectric layer and the metal-containing layer.Type: GrantFiled: November 1, 2012Date of Patent: May 13, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, Chi-Yu Chou, Kuei-Pin Lee, Chen-Kuang Lien, Yu-Chang Hsiao, Yao-Hsiang Liang, Yu-Min Chang