Abstract: Provided is an enhancement mode HEMT device including a substrate, a channel layer, a barrier layer, a P-type semiconductor layer, a carrier providing layer, a gate electrode, a source electrode and a drain electrode. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The P-type semiconductor layer is disposed on the barrier layer. The carrier providing layer is disposed on the sidewall of the P-type semiconductor layer and extends laterally away from the P-type semiconductor layer. The gate electrode is disposed on the P-type semiconductor layer. The source electrode and the drain electrode are disposed on the carrier providing layer and at two sides of the gate electrode. A method of forming an enhancement mode HEMT device is further provided.

Abstract: Provided is a nitride semiconductor device including a substrate, a nucleation layer, a buffer layer, a channel layer, a first electrode, and a second electrode. The substrate has a first surface and a second surface opposite to the first surface. The nucleation layer, the buffer layer, the channel layer, and the barrier layer are sequentially disposed on the first surface of the substrate. The first electrode layer and the second electrode layer are disposed on the barrier layer. A first void penetrates through the substrate, the nucleation layer, the buffer layer, the channel layer, and the barrier layer and exposes a portion of the first electrode.

Abstract: A nitride semiconductor device is provided, including a substrate having a first surface and a second surface opposite to each other; a nucleation layer disposed on the first surface of the substrate; a doped nitride semiconductor layer disposed on the nucleation layer; a doped first buffer layer disposed on the doped nitride semiconductor layer; a channel layer disposed on the doped first buffer layer; a barrier layer disposed on the channel layer; a first electrode disposed on the barrier layer; a second electrode electrically connected to the doped nitride semiconductor layer; and a doped region disposed at least in a portion of the doped nitride semiconductor layer, wherein the doped region is extended from below the first electrode to be partially overlapped with the second electrode.

Abstract: Provided is an enhancement mode HEMT device including a substrate, a channel layer, a barrier layer, a P-type semiconductor layer, a carrier providing layer, a gate electrode, a source electrode and a drain electrode. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The P-type semiconductor layer is disposed on the barrier layer. The carrier providing layer is disposed on the sidewall of the P-type semiconductor layer and extends laterally away from the P-type semiconductor layer. The gate electrode is disposed on the P-type semiconductor layer. The source electrode and the drain electrode are disposed on the carrier providing layer and at two sides of the gate electrode. A method of forming an enhancement mode HEMT device is further provided.

Abstract: A nitride semiconductor device is provided, including a substrate having a first surface and a second surface opposite to each other; a nucleation layer disposed on the first surface of the substrate; a doped nitride semiconductor layer disposed on the nucleation layer; a doped first buffer layer disposed on the doped nitride semiconductor layer; a channel layer disposed on the doped first buffer layer; a barrier layer disposed on the channel layer; a first electrode disposed on the barrier layer; a second electrode electrically connected to the doped nitride semiconductor layer; and a doped region disposed at least in a portion of the doped nitride semiconductor layer, wherein the doped region is extended from below the first electrode to be partially overlapped with the second electrode.

Abstract: Provided is a nitride semiconductor device including a substrate, a nucleation layer, a buffer layer, a channel layer, a first electrode, and a second electrode. The substrate has a first surface and a second surface opposite to the first surface. The nucleation layer, the buffer layer, the channel layer, and the barrier layer are sequentially disposed on the first surface of the substrate. The first electrode layer and the second electrode layer are disposed on the barrier layer. A first void penetrates through the substrate, the nucleation layer, the buffer layer, the channel layer, and the barrier layer and exposes a portion of the first electrode.