Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device may include a substrate, a first via, a first pad, a second pad, and a first passivation layer. The first pad may be over the substrate. The second pad may be over the substrate. The second pad may be parallel to the first pad. The first passivation layer may surround the first pad and the second pad. The first passivation layer may include a first part on the first pad. The first passivation layer may include a second part on the second pad. A thickness of the first part of the first passivation layer may exceed a height of the first pad. A thickness of the second part of the first passivation layer may exceed a height of the second pad.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device may include a substrate, a first via, a first pad, a second pad, and a first passivation layer. The first pad may be over the substrate. The second pad may be over the substrate. The second pad may be parallel to the first pad. The first passivation layer may surround the first pad and the second pad. The first passivation layer may include a first part on the first pad. The first passivation layer may include a second part on the second pad. A thickness of the first part of the first passivation layer may exceed a height of the first pad. A thickness of the second part of the first passivation layer may exceed a height of the second pad.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.