Patents by Inventor Kueing D. Chen

Kueing D. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making electrostatic discharge protection for semiconductor input devices
    Patent number: 5166089
    Abstract: A method and structure for protecting an integrated circuit from electrostatic discharges are disclosed. A Schottky diode (22) is connected to an input bond pad (12) and to a MOSFET transistor (17) which is desired to be protected. The normally high breakdown voltage required to drive the Schottky diode (22) into conduction is reduced by providing a trigger transistor (24) for prematurely triggering the diode (22). When the base-collector junction of the common emitter configured trigger transistor (24) is driven into avalanche breakdown by the electrostatic discharge, charged carriers (60) are generated, and attracted by the Schottky diode (22). The base (54) of the trigger transistor (24) is biased during normal operations with a supply voltage, and during electrostatic discharges to a higher voltage by an inherent Zener diode (64).
    Type: Grant
    Filed: July 10, 1991
    Date of Patent: November 24, 1992
    Assignee: Texas Instruments Incorporated
    Inventors: Kueing D. Chen, Roland H. Pang