Patents by Inventor Kuek Hsieh Ting

Kuek Hsieh Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8273584
    Abstract: A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: September 25, 2012
    Assignee: Infineon Technologies AG
    Inventors: Chiang Chau Fatt, Kuek Hsieh Ting
  • Patent number: 7947990
    Abstract: A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.
    Type: Grant
    Filed: March 19, 2008
    Date of Patent: May 24, 2011
    Assignee: Infineon Technologies AG
    Inventors: Chiang Chau Fatt, Kuek Hsieh Ting
  • Publication number: 20110092001
    Abstract: A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.
    Type: Application
    Filed: December 22, 2010
    Publication date: April 21, 2011
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Chiang Chau Fatt, Kuek Hsieh Ting
  • Publication number: 20090236615
    Abstract: A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.
    Type: Application
    Filed: March 19, 2008
    Publication date: September 24, 2009
    Applicant: Infineon Technologies AG
    Inventors: Chiang Chau Fatt, Kuek Hsieh Ting