Patents by Inventor Kuen-Hsien Lin

Kuen-Hsien Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to prevent white pixels in a CMOS image sensor
    Patent number: 7202899
    Abstract: A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is configured, such that the depletion region is maintained in a defect-free region associated with the pixel layout for the image sensor, thereby reducing white pixel difficulties caused by induced and undesired current. The image sensor is preferably a CMOS image sensor. A depletion region of the photodiode is constantly maintained in a defect-free region during operation of the CMOS image sensor.
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: April 10, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuen-Hsien Lin, Shang-Hsuan Liu, Chih-Hsing Chen, Hung Jen Tsai, Hsien-Tsong Liu
  • Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products
    Patent number: 6881986
    Abstract: A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of parallel finger-like n-wells is formed in the p-type region. The fingers are connected to a conductive region at one end.
    Type: Grant
    Filed: November 7, 2001
    Date of Patent: April 19, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yu-Zung Chiou, Kuen-Hsien Lin, Chen Ying Lieh, Shou-Yi Hsu
  • Smart pixel layout for CMOS image sensor
    Publication number: 20030218678
    Abstract: A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is configured, such that the depletion region is maintained in a defect-free region associated with the pixel layout for the image sensor, thereby reducing white pixel difficulties caused by induced and undesired current. The image sensor is preferably a CMOS image sensor. A depletion region of the photodiode is constantly maintained in a defect-free region during operation of the CMOS image sensor.
    Type: Application
    Filed: May 21, 2002
    Publication date: November 27, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuen-Hsien Lin, Shang-Hsuan Liu, Chih-Hsing Chen, Hung Jen Tsai, Hsien-Tsong Liu