Abstract: A lifting device comprises a main body, a clasping assembly, a first shaft and a second shaft. The main body comprises a first through hole, a second through hole and a third through hole therein. The clasping assembly comprises a closed-loop structure configured to be engaged with the third through hole. The first shaft is adapted to be inserted into the first through hole of the main body, and the second shaft is adapted to be inserted into the second through hole of the main body. The main body comprises positioning slots therein and the first and the second shafts have positioning elements thereon. The positioning slots collaborate with the positioning elements to prevent the first and the second shafts from falling out of the first and the second through holes of the main body.

Abstract: The present invention relates to a lifting device and a lifting method using the same. The lifting device comprises a main body, a clasping assembly, a first shaft and a second shaft. The main body comprises a first through hole, a second through hole and a third through hole therein. An axis passes through the third through hole, and the first through hole and second through hole are symmetrically arranged with respect to the axis. The clasping assembly comprises a closed-loop structure configured to be engaged with the third through hole. The first shaft is adapted to be inserted into the first through hole of the main body, and the second shaft is adapted to be inserted into the second through hole of the main body.

Abstract: A nonvolatile memory array is divided into multiple memory groups. The nonvolatile memory array receives an erase command to erase a first set of the memory groups, and not a second set of the memory groups. The control circuitry is responsive to the erase command to erase the first set of memory groups, by applying a recovery bias arrangement that adjusts threshold voltages of memory cells in at least one memory group of the second set of memory groups. By applying the recovery bias arrangement to memory cells in at least one memory group of the second set of memory groups, erase disturb is corrected during the recovery bias arrangement, at least in part.