Abstract: A driving circuit includes an activating end, an operation switch, a voltage control end, and an output switch. The activating end selectively outputs a first voltage control signal and a second voltage control signal. The operation switch is turned off according to the first voltage control signal to generate a low voltage control signal or is turned on according to the second voltage control signal to generate a high voltage control signal. The voltage control end generates a low voltage according to the low voltage control signal or generates a bias voltage according to the high voltage control signal. The output switch is turned off according to the low voltage to determine that an output voltage is the same as the low voltage, or is turned on according to the bias voltage to determine that the output voltage is the same as the high voltage.

Abstract: A driving circuit includes an activating end, an operation switch, a voltage control end, and an output switch. The activating end selectively outputs a first voltage control signal and a second voltage control signal. The operation switch is turned off according to the first voltage control signal to generate a low voltage control signal or is turned on according to the second voltage control signal to generate a high voltage control signal. The voltage control end generates a low voltage according to the low voltage control signal or generates a bias voltage according to the high voltage control signal. The output switch is turned off according to the low voltage to determine that an output voltage is the same as the low voltage, or is turned on according to the bias voltage to determine that the output voltage is the same as the high voltage.

Abstract: A low supply voltage band-gap reference circuit is provided, which includes a positive temperature coefficient current generation unit and a negative temperature coefficient current generation unit, and it is implemented by way of current summing. Through the current-mode temperature compensation technique, the present invention is able to reduce the voltage headroom and the number of operational amplifiers required by the conventional voltage-summing method, as well as the influence to the output voltage due to the offset voltage, thereby providing a stable and low voltage band-gap reference voltage level. In addition, by reducing the number of operational amplifiers and resistors of high resistance, the circuit area is reduced, and chip cost is saved.

Abstract: A non-linearity compensation circuit and a bandgap reference circuit using the same for compensating non-linear effects of a reference voltage are provided. In the non-linearity compensation circuit, the reference voltage is transformed into a temperature independent current. A current mirror mirrors the temperature independent current for biasing a bipolar junction transistor (BJT). Further, two resistors are used for estimating a non-linear voltage, so as to compensate the reference voltage.

Abstract: A low supply voltage band-gap reference circuit is provided, which includes a positive temperature coefficient current generation unit and a negative temperature coefficient current generation unit, and it is implemented by way of current summing. Through the current-mode temperature compensation technique, the present invention is able to reduce the voltage headroom and the number of operational amplifiers required by the conventional voltage-summing method, as well as the influence to the output voltage due to the offset voltage, thereby providing a stable and low voltage band-gap reference voltage level. In addition, by reducing the number of operational amplifiers and resistors of high resistance, the circuit area is reduced, and chip cost is saved.

Abstract: A non-linearity compensation circuit and a bandgap reference circuit using the same for compensating non-linear effects of a reference voltage are provided. In the non-linearity compensation circuit, the reference voltage is transformed into a temperature independent current. A current mirror mirrors the temperature independent current for biasing a bipolar junction transistor (BJT). Further, two resistors are used for estimating a non-linear voltage, so as to compensate the reference voltage.

Abstract: A voltage reference circuit including a positive temperature coefficient current generator, a negative temperature coefficient current generator, and a first resistor is provided. In the positive temperature coefficient current generator, two transistors are operated in the weak inversion region, and a second resistor is connected in series between the gates of the two transistors. The second resistor employs the characteristic that a transistor operated in weak inversion region acts like a bipolar junction transistor to generate a positive temperature coefficient current. The negative temperature coefficient current generator generates a negative temperature coefficient current in response to a negative temperature coefficient voltage drop on a third resistor. The positive temperature coefficient current and the negative temperature coefficient current flow through the first resistor together, thus producing a stable reference voltage.

Abstract: A circuit for converting voltage levels that comprises a first power supply providing a first voltage level, a second power supply providing a second voltage level, a first transistor formed between the first and second power supplies including a gate electrode for receiving an input signal including a first state and a second state, a second transistor formed between the first transistor and the second power supply including a gate electrode for receiving a bias voltage, and a current source formed between the second transistor and the second power supply providing a current in response to the first state of the input signal, wherein a voltage level at a node disposed between the second transistor and the current source is pulled to a third voltage level in response to the first state of the input signal, and pulled to the second voltage level in response to the second state of the input signal.

Abstract: A circuit for converting voltage levels for a liquid crystal display panel that comprises a signal including a first state of a first voltage level and a second state of a second voltage level, a first power supply providing the first voltage level, a first high-voltage transistor including a gate electrode coupled to the first power supply, a first electrode receiving the signal, and a second electrode coupled to a node, a second power supply providing a third voltage level, and a second high-voltage transistor including a first electrode coupled to the second power supply and a second electrode coupled to the node, wherein a voltage level at the node is pulled to approximately the third voltage level in response to the first state of the signal, and pulled to approximately the second voltage level in response to the second state of the signal.

Abstract: A circuit for converting voltage levels that comprises a first power supply providing a first voltage level, a second power supply providing a second voltage level, a first transistor formed between the first and second power supplies including a gate electrode for receiving an input signal including a first state and a second state, a second transistor formed between the first transistor and the second power supply including a gate electrode for receiving a bias voltage, and a current source formed between the second transistor and the second power supply providing a current in response to the first state of the input signal, wherein a voltage level at a node disposed between the second transistor and the current source is pulled to a third voltage level in response to the first state of the input signal, and pulled to the second voltage level in response to the second state of the input signal.

Abstract: A circuit for converting voltage levels for a liquid crystal display panel that comprises a signal including a first state of a first voltage level and a second state of a second voltage level, a first power supply providing the first voltage level, a first high-voltage transistor including a gate electrode coupled to the first power supply, a first electrode receiving the signal, and a second electrode coupled to a node, a second power supply providing a third voltage level, and a second high-voltage transistor including a first electrode coupled to the second power supply and a second electrode coupled to the node, wherein a voltage level at the node is pulled to approximately the third voltage level in response to the first state of the signal, and pulled to approximately the second voltage level in response to the second state of the signal.