Patents by Inventor Kui-Jong Baek

Kui-Jong Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8173546
    Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: May 8, 2012
    Assignees: Samsung Electronics Co., Ltd., Techno Semichem Co., Ltd.
    Inventors: Bong-Kyun Kim, Hong-Sick Park, Jong-Hyun Choung, Sun-Young Hong, Ji-Sun Lee, Byeong-Jin Lee, Kui-Jong Baek, Tai-Hyung Rhee, Yong-Sung Song
  • Publication number: 20110256485
    Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.
    Type: Application
    Filed: June 23, 2011
    Publication date: October 20, 2011
    Inventors: Bong-Kyun KIM, Hong-Sick Park, Jong-Hyun Choung, Sun-Young Hong, Ji-Sun Lee, Byeong-Jin Lee, Kui-Jong Baek, Tai-Hyung Rhee, Yong-Sung Song
  • Patent number: 7985982
    Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.
    Type: Grant
    Filed: February 24, 2009
    Date of Patent: July 26, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bong-Kyun Kim, Hong-Sick Park, Jong-Hyun Choung, Sun-Young Hong, Ji-Sun Lee, Byeong-Jin Lee, Kui-Jong Baek, Tai-Hyung Rhee, Yong-Sung Song
  • Patent number: 7951765
    Abstract: The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
    Type: Grant
    Filed: August 5, 2006
    Date of Patent: May 31, 2011
    Assignee: Techno Semichem Co., Ltd.
    Inventors: Hyun Tak Kim, Seong Hwan Park, Jung Hun Lim, Sung Bae Kim, Chan Jin Jeong, Kui Jong Baek
  • Publication number: 20110045741
    Abstract: Disclosed is a chemical-mechanical polishing composition used in a process for chemical-mechanical polishing of silicon oxide layer having severe unevenness with large step-height. The composition includes abrasive particles of metal oxide; and at least one compound(s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group(s) and hydroxyl group(s) or their salts, or a mixture thereof. A polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The composition shortens the vapor-deposition time of a layer to be polished, saves the raw material to be vapor-deposited, shortens the chemical-mechanical polishing time, and saves the slurry employed.
    Type: Application
    Filed: April 28, 2006
    Publication date: February 24, 2011
    Applicant: TECHNO SEMICHEM CO., LTD.
    Inventors: Jung-Ryul Ahn, Jong-Kwan Park, Seok-Ju Kim, Eun-Il Jeong, Deok-Su Han, Hyu-Bum Park, Kui-Jong Baek, Tae-Kyeong Lee
  • Patent number: 7851372
    Abstract: In one aspect, a composition is provided which is capable of removing an insulation material which includes at least one of a low-k material and a passivation material. The composition of this aspect includes about 5 to about 40 percent by weight of a fluorine compound, about 0.01 to about 20 percent by weight of a first oxidizing agent, about 10 to about 50 percent by weight of a second oxidizing agent, and a remaining water.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: December 14, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Min Kang, Kui-Jong Baek, Woong Hahn, Chun-Deuk Lee, Jung-Hun Lim, Young-Nam Kim, Hyun-Joon Kim
  • Publication number: 20090312216
    Abstract: The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
    Type: Application
    Filed: August 5, 2006
    Publication date: December 17, 2009
    Applicant: TECHNO SEMICHEM CO., LTD.
    Inventors: Hyun Tak Kim, Seong Hwan Park, Jung Hun Lim, Sung Bae Kim, Chan Jin Jeong, Kui Jong Baek, Woong Hahn, Sang Won Lee, Gun-Woong Lee
  • Publication number: 20090298289
    Abstract: The present invention relates to a novel slurry composition for copper polishing, comprising zeolite which is a porous crystalline material for CMP of copper film in a semiconductor manufacturing process. The slurry composition according to the present invention comprises zeolite, an oxidant and a polish promoting agent and may further comprise a corrosion inhibitor, a surfactant, an aminoalcohol, an antiseptic and a dispersion agent and pH is in a range of 1 to 7. The zeolite slurry according to the present invention has advantages of absorbing and removing metal cation generated in CMP process by using zeolite and having a low level of scratches as the zeolite has micropores therein and thus its hardness is low. The slurry composition using zeolite of the present invention is usable to both first and second step polishing of copper damascene process and particularly useful as the first step polishing slurry for copper.
    Type: Application
    Filed: March 29, 2007
    Publication date: December 3, 2009
    Applicant: TECHNO SEMICHEM CO., LTD.
    Inventors: Eun-Il Jeong, Hyu-Bum Park, Seok-Ju Kim, Deok-Su Han, Jung-Ryul Ahn, Jong-Kwan Park, Kui-Jong Baek
  • Publication number: 20090227075
    Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.
    Type: Application
    Filed: February 24, 2009
    Publication date: September 10, 2009
    Inventors: Bong-Kyun Kim, Hong-Sick Park, Jong-Hyun Choung, Sun-Young Hong, Ji-Sun Lee, Byeong-Jin Lee, Kui-Jong Baek, Tai-Hyung Lee, Yong-Sung Song
  • Publication number: 20070087580
    Abstract: In one aspect, a composition is provided which is capable of removing an insulation material which includes at least one of a low-k material and a passivation material. The composition of this aspect includes about 5 to about 40 percent by weight of a fluorine compound, about 0.01 to about 20 percent by weight of a first oxidizing agent, about 10 to about 50 percent by weight of a second oxidizing agent, and a remaining water.
    Type: Application
    Filed: October 2, 2006
    Publication date: April 19, 2007
    Inventors: Dong-Min Kang, Kui-Jong Baek, Woong Hahn, Chun-Deuk Lee, Jung-Hun Lim, Young-Nam Kim, Hyun-Joon Kim
  • Publication number: 20060287208
    Abstract: A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.
    Type: Application
    Filed: August 28, 2006
    Publication date: December 21, 2006
    Inventors: Kwang-Wook Lee, In-Seak Hwang, Keum-Joo Lee, Chang-Lyong Song, Yong-Sun Ko, Kui-Jong Baek, Woong Han
  • Publication number: 20060172907
    Abstract: According to an example embodiment of the present invention, the microelectronic cleaning agent may include a fluoride component, an acid component, a chelating agent, a surfactant and water. Example embodiments of the present invention provide a microelectronic cleaning agent which can selectively remove, for example, a high-k dielectric layer. The microelectronic cleaning agent includes from about 0.001 weight % to about 10 weight % of a fluoride component, from about 0.001 weight % to about 30 weight % of an acid component, from about 0.001 weight % to about 20 weight % of a chelating agent, from about 0.001 weight % to about 10 weight % of a surfactant, and water (H2O). The water may comprise the remainder of the cleaning agent. According to another embodiment of the present invention, a method of fabricating a semiconductor device using the microelectronic cleaning agent is also provided.
    Type: Application
    Filed: January 30, 2006
    Publication date: August 3, 2006
    Inventors: Sang-Yong Kim, Ji-Hoon Cha, Chang-Ki Hong, Sang-Jun Choi, Woo-Gwan Shim, Kui-Jong Baek, Sung-Bae Kim, Hyun-Tak Kim, Sang-Won Lee, Woong Han, Jung-Hun Lim
  • Publication number: 20060014391
    Abstract: A metal-containing pattern structure is formed on a semiconductor substrate, and a cleaning composition is applied to the semiconductor substrate. The cleaning composition includes, based on a total weight of the cleaning composition, about 78 wt % to about 99.98 wt % of an acidic aqueous solution, about 0.01 wt % to about 11 wt % of a first chelating agent, and about 0.01 wt % to about 11 wt % of a second chelating agent. The metal-containing pattern structure includes an exposed first surface portion and a second surface portion covered with a polymer. Application of the cleaning solution forms a first corrosion-inhibition layer on the first surface portion of the metal-containing pattern structure, and removes the polymer from the second surface portion of the metal-containing pattern structure.
    Type: Application
    Filed: July 8, 2005
    Publication date: January 19, 2006
    Inventors: Kyung-Jin Lee, Seung-Hyun Ahn, Baik-Soon Choi, Kui-Jong Baek, Woong Hahn
  • Publication number: 20050261151
    Abstract: A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.
    Type: Application
    Filed: January 6, 2005
    Publication date: November 24, 2005
    Inventors: Kwang-Wook Lee, In-Seak Hwang, Keum-Joo Lee, Chang-Lyong Song, Yong-Sun Ko, Kui-Jong Baek, Woong Han
  • Patent number: 6881679
    Abstract: An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: April 19, 2005
    Assignee: LG. Philips LCD Co., Ltd.
    Inventors: Gyoo-Chul Jo, Gee-Sung Chae, Yong-Sup Hwang, Oh-Nam Kwon, Kyoung-Mook Lee, Kui-Jong Baek, Tai-Hyung Rhee
  • Publication number: 20030124851
    Abstract: An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.
    Type: Application
    Filed: December 31, 2002
    Publication date: July 3, 2003
    Applicant: LG.Philips LCD Co., Ltd.
    Inventors: Gyoo-Chul Jo, Gee-Sung Chae, Yong-Sup Hwang, Oh-Nam Kwon, Kyoung-Mook Lee, Kui-Jong Baek, Tai-Hyung Rhee