Abstract: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

Abstract: The miniaturized piezoelectric accelerometer includes a support frame (102) having a cavity (104) and a seismic mass (108) supported by a plurality of suspension beams (110) extending from the support frame (102). Each of the suspension beams (110) has a piezoelectric thin film coated on a top surface thereof, with a pair of inter-digital electrodes (114) deposited on an upper surface of each piezoelectric thin film. The presence of acceleration excites bending and thus strain in the piezoelectric thin film, which in turn causes electrical signals to be generated over terminals of the electrodes (114). To collect constructively the output of the electrodes (114), one terminal of each of the electrodes (114) is routed to and electrically connected at a top surface (308) of the seismic mass (108).

Abstract: A power supply device and system have an electrically polarized element in which a remnant electrical polarization is formed and retained. Electrodes are formed on the electrically polarized elements and the remnant electrical polarization generates an electrical potential on the electrodes. Electrical circuits are coupled to the electrically polarized element to control the external electric charges attracted and distributed on the electrodes, for establishing the electrical potential on the electrodes. The electrodes can output electric currents by controlling the external electric charges distribution. The electrically polarized element may be made of ferroelectric material, including a ferroelectric bulk ceramic, ferroelectric multilayer ceramic, ferroelectric single crystal, ferroelectric thin film, ferroelectric thick film and ferroelectric polymer, and all the other materials with electric polarization retained therein.

Abstract: The present invention provides a thin film photovoltaic device and a method of forming a thin film photovoltaic device. The thin film photovoltaic device has a substrate, a thin film layer formed on the substrate and first and second electrodes formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film. Upon exposure to light, the thin film layer converts light energy into electricity. According to the method, a thin film layer is formed on a substrate. A first electrode and a second electrode are formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film.

Abstract: The present invention provides a thin film photovoltaic device and a method of forming a thin film photovoltaic device. The thin film photovoltaic device has a substrate, a thin film layer formed on the substrate and first and second electrodes formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film. Upon exposure to light, the thin film layer converts light energy into electricity. According to the method, a thin film layer is formed on a substrate. A first electrode and a second electrode are formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film.

Abstract: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

Abstract: A method of producing a piezoelectric ceramic thick film on a substrate, said method comprising: providing a piezoelectric ceramic material in powder form; forming a liquid mixture by mixing the powdered material with a liquid phase precursor of a metal oxide of low-melting point, said precursor being adapted to decompose, upon subsequent annealing, into the metal oxide; drying the liquid mixture to form a precipitate; milling the precipitate to form a powdered precipitate; adding an organic carrier to the powdered precipitate; further milling the precipitate to form a paste; depositing a layer of the paste, as a wet film, onto the substrate; and annealing the layered substrate at a temperature and for a time sufficient to cause transformation of the paste into the thick film.

Abstract: A UV light detector is disclosed that has a UV sensing element comprising a substrate and a thin film layer formed on the substrate. The thin film layer is for receiving and converting UV light into electricity for a photovoltaic output. First and second electrodes are formed on one surface of the thin film layer and are configured to form an electric polarization in the thin film layer between the first and second electrodes and to collect the photovoltaic output. There is also an amplifier and an output display. The UV sensing element is configured to collect the photovoltaic output, the amplifier being configured to receive the photovoltaic output from the UV sensing element, the output display being configured to provide a display when UV light is received at the one surface, the display being derived from the photovoltaic output. A UV dosimeter is also disclosed.

Abstract: An electromechanical device includes a support structure formed by attaching inner surfaces of second and third substrates to a first substrate. The support structure includes at least one cavity between the second and third layers. An electromechanical active element is provided on an outer surface of at least one of the second or third layers.

Abstract: Ferroelectric Poly(vinylidene fluoride) Film on a Substrate and Method for its Formation A method of producing a poly(vinylidene fluoride) (“PVDF”) film on a substrate from a precursor solution is disclosed. The method comprises preparing the precursor solution for the PVDF film and dissolving an additive in the precursor solution, the additive being selected from the group consisting of: a hydrate salt, and a hygroscopic chemical. The PVDF is added to the precursor solution. The PVDF solution is coated on a substrate to form an as-deposited PVDF film which is dried and crystallized at an elevated temperature. The dried and crystallized as-deposited PVDF film is annealed at a further elevated temperature. The further elevated temperature is greater than the elevated temperature but less than a melting point of the as-deposited PVDF film. The additive dehydrates at the further elevated temperature. A corresponding product is also disclosed.

Abstract: An electromechanical device includes a support structure formed by attaching inner surfaces of second and third substrates to a first substrate. The support structure includes at least one cavity between the second and third layers. An electromechanical active element is provided on an outer surface of at least one of the second or third layers.

Abstract: The present invention provides new ferroelectric ceramic materials which can be sintered at a temperature lower than that of the conventional ferroelectric ceramic materials and upon sintering, devices formed of the new ferroelectric ceramic materials possesses excellent piezoelectric properties which are suitable for many industrial applications. The ferroelectric ceramic material includes a composition with a general formula of wPb(Ni1/3Nb2/3)O3?xPb(Zn1/3Nb2/3)O3?yPb(Mg1/3Nb2/3)O3?zPbZrO3?(1?w?x?y?z)PbTiO3, in which 0<w<1, 0<x<1, 0?y<1, 0<z<1, w+x+y+z<1, and 0.5?w+x+y. A method of preparing a ferroelectric ceramic material includes preparing MgNb2O6, ZnNb2O6 and NiNb2O6 powder precursors, mixing the precursors with PbO, TiO2 and ZrO2 to form a mixture and calcining the mixture.

Abstract: An electromechanical device includes a support structure formed by attaching inner surfaces of second and third substrates to a first substrate. The support structure includes at least one cavity between the second and third layers. An electromechanical active element is provided on an outer surface of at least one of the second or third layers.

Abstract: A method for fabricating a MEMS device comprises providing a substrate having a back side, a front side opposite to the back side and a periphery portion. A desired microstructure is formed on the back side of the substrate. The substrate is then supported for rotation. A precursor solution is deposited on the front side of the substrate during rotation so that a thin film layer may be formed thereon. During formation of the thin film layer, the substrate is supported and rotated that the microstructure formed on the back side is protected.

Abstract: The present invention provides a thin film photovoltaic device and a method of forming a thin film photovoltaic device. The thin film photovoltaic device has a substrate, a thin film layer formed on the substrate and first and second electrodes formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film. Upon exposure to light, the thin film layer converts light energy into electricity. According to the method, a thin film layer is formed on a substrate. A first electrode and a second electrode are formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film.

Abstract: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

Abstract: A method for fabricating a MEMS device comprises providing a substrate having a back side, a front side opposite to the back side and a periphery portion. A desired microstructure is formed on the back side of the substrate. The substrate is then supported for rotation. A precursor solution is deposited on the front side of the substrate during rotation so that a thin film layer may be formed thereon. During formation of the thin film layer, the substrate is supported and rotated that the microstructure formed on the back side is protected.

Abstract: A method for fabricating a MEMS device comprises providing a substrate having a back side, a front side opposite to the back side and a periphery portion. A desired microstructure is formed on the back side of the substrate. The substrate is then supported for rotation. A precursor solution is deposited on the front side of the substrate during rotation so that a thin film layer may be formed thereon. During formation of the thin film layer, the substrate is supported and rotated that the microstructure formed on the back side is protected.

Abstract: An electrochemically actuated liquid delivering device which is capable of releasing specific volumes of liquid at desired flow rates. The device includes a sealed electrolytic chamber which is adapted to contain an electrolyte and has at least one pair of electrodes which are at least partially in contact with the electrolyte. It also has a liquid chamber formed of a rigid material which is housed at least partially within the electrolytic chamber and is adapted to contain a liquid. It has pressure transfer means separating the electrolytic chamber from the liquid chamber and administering means which is adapted to release the liquid from the liquid chamber under the influence of pressure applied to the liquid chamber. The device is arranged so that when current is passed through the electrolyte via the electrodes, gas is generated from the electrolyte thereby increasing pressure inside the electrolytic chamber.

Abstract: A method for fabricating a MEMS device comprises providing a substrate having a back side, a front side opposite to the back side and a periphery portion. A desired microstructure is formed on the back side of the substrate. The substrate is then supported for rotation. A precursor solution is deposited on the front side of the substrate during rotation so that a thin film layer may be formed thereon. During formation of the thin film layer, the substrate is supported and rotated that the microstructure formed on the back side is protected.