Abstract: A particulate matter (PM) sensor unit may include an exhaust line where exhaust gas passes, and a PM sensor that may be disposed at one side of the exhaust line and that generates a signal when particulate matter included in the exhaust gas passes the vicinity thereof, wherein the PM sensor may be an electrostatic induction type that generates an induction charge while the particulate matter having an electric charge passes the vicinity thereof.

Abstract: A particulate sensor apparatus may include an exhaust line through which exhaust gas flows, and a sensor that may be disposed at one side in the exhaust line and generates electrical charges when a particulate passes near vicinity of the sensor, wherein an electrode portion may be formed on a front surface of the sensor facing the particulate.

Abstract: A particulate matter (PM) sensor unit may include an exhaust line where exhaust gas passes, and a PM sensor that may be disposed at one side of the exhaust line and that generates a signal when particulate matter included in the exhaust gas passes the vicinity thereof, wherein the PM sensor may be an electrostatic induction type that generates an induction charge while the particulate matter having an electric charge passes the vicinity thereof

Abstract: A particulate sensor apparatus may include an exhaust line through which exhaust gas flows, and a sensor that may be disposed at one side in the exhaust line and generates electrical charges when a particulate passes near vicinity of the sensor, wherein an electrode portion may be formed on a front surface of the sensor facing the particulate.

Abstract: A particulate matter (PM) sensor unit may include an exhaust line where exhaust gas passes, and a PM sensor that may be disposed at one side of the exhaust line and that generates a signal when particulate matter included in the exhaust gas passes the vicinity thereof, wherein the PM sensor may be an electrostatic induction type that generates an induction charge while the particulate matter having an electric charge passes the vicinity thereof.

Abstract: The present invention relates to a probe card that a probe of the probe card is movable only in a vertical direction using a trench to improve a electrical or a mechanical characteristic and to automatically limit the vertical movement thereof within a predetermined range. A pitch may be reduced so as to correspond to a decreasing distance between pads. A flatness of a probe tip may be maintained within a few micrometers using a semiconductor manufacturing process. 32 simultaneous parallel testing is possible contrary to a convention probe card. A wafer level testing is possible, and time and cost for a wafer testing are reduced.

Abstract: The present invention relates to a probe card that a probe of the probe card is movable only in a vertical direction using a trench to improve a electrical or a mechanical characteristic and to automatically limit the vertical movement thereof within a predetermined range. A pitch may be reduced so as to correspond to a decreasing distance between pads. A flatness of a probe tip may be maintained within a few micrometers using a semiconductor manufacturing process. 32 simultaneous parallel testing is possible contrary to a convention probe card. A wafer level testing is possible, and time and cost for a wafer testing are reduced.

Abstract: A side-bonding method of a flip-chip semiconductor device, a MEMS device package and a package method using the same, in which firm bonding and insensitivity to surface roughness may be obtained, include forming a UBM on a bonding line of a lower substrate having a semiconductor device formed thereon, plating solder on the UBM on the lower substrate, forming a trench in the upper substrate to contact the lower substrate at a location corresponding to a location of the solder and forming a second UBM in the trench, coupling the upper substrate and the lower substrate by inserting the solder into the trench, and heating the upper substrate and the lower substrate at a temperature higher than a melting point of the solder so that the solder is wetted toward sides of the trench to bond the upper substrate and the lower substrate.

Abstract: A side-bonding method of a flip-chip semiconductor device, a MEMS device package and a package method using the same, in which firm bonding and insensitivity to surface roughness may be obtained, include forming a UBM on a bonding line of a lower substrate having a semiconductor device formed thereon, plating solder on the UBM on the lower substrate, forming a trench in the upper substrate to contact the lower substrate at a location corresponding to a location of the solder and forming a second UBM in the trench, coupling the upper substrate and the lower substrate by inserting the solder into the trench, and heating the upper substrate and the lower substrate at a temperature higher than a melting point of the solder so that the solder is wetted toward sides of the trench to bond the upper substrate and the lower substrate.