Patents by Inventor Kulbinder Kumar Banger

Kulbinder Kumar Banger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a metal oxide semiconductor
    Patent number: 8883617
    Abstract: One aspect in the present disclosure relates to a method for manufacturing an amorphous metal oxide semiconductor. In an exemplary embodiment, a film is deposited on a substrate from a mixed solution as a starting element. For example, the mixed solution includes at least an indium alkoxide and a zinc alkoxide in a solvent. The film made from the mixed solution on the substrate is cured by thermal-annealing in a water vapor atmosphere, at a temperature range of, for example, 210 to 275 degrees Celsius, inclusive.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: November 11, 2014
    Assignees: Panasonic Corporation, Cambridge Enterprise Ltd.
    Inventors: Yoshihisa Yamashita, Kulbinder Kumar Banger, Henning Sirringhaus
  • METHOD FOR MANUFACTURING A METAL OXIDE SEMICONDUCTOR
    Publication number: 20130005124
    Abstract: One aspect in the present disclosure relates to a method for manufacturing an amorphous metal oxide semiconductor. In an exemplary embodiment, a film is deposited on a substrate from a mixed solution as a starting element. For example, the mixed solution includes at least an indium alkoxide and a zinc alkoxide in a solvent. The film made from the mixed solution on the substrate is cured by thermal-annealing in a water vapor atmosphere, at a temperature range of, for example, 210 to 275 degrees Celsius, inclusive.
    Type: Application
    Filed: September 11, 2012
    Publication date: January 3, 2013
    Applicants: CAMBRIDGE ENTERPRISE LTD., PANASONIC CORPORATION
    Inventors: Yoshihisa YAMASHITA, Kulbinder Kumar BANGER, Henning SIRRINGHAUS
  • OXIDE SEMICONDUCTOR
    Publication number: 20120037901
    Abstract: The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.
    Type: Application
    Filed: April 24, 2009
    Publication date: February 16, 2012
    Applicants: CAMBRIDGE ENTERPRISE LTD., PANASONIC CORPORATION
    Inventors: Kiyotaka Mori, Henning Sirringhaus, Kulbinder Kumar Banger, Rebecca Lorenz Peterson
  • MOCVD precursors based on organometalloid ligands
    Patent number: 6359159
    Abstract: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: March 19, 2002
    Assignee: Research Foundation of State University of New York
    Inventors: John T. Welch, Paul J. Toscano, Rolf Claessen, Andrei Kornilov, Kulbinder Kumar Banger
  • MOCVD precursors based on organometalloid ligands
    Patent number: 6340768
    Abstract: Volatile metal complexes with &agr;-sila-&bgr;-diketonate ligands containing haloalkyl, and particularly, perfluoroalkyl, substitutents are useful as metal precursors for chemical vapor deposition processes and as nanostructured materials containing fluorous domains.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: January 22, 2002
    Assignee: Research Foundation of State University of New York
    Inventors: John T. Welch, Kulbinder Kumar Banger, Seiichiro Higashiya, Silvana C. Ngo
  • MOCVD precursors based on organometalloid ligands
    Patent number: 6184403
    Abstract: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: February 6, 2001
    Assignee: Research Foundation of State University of New York
    Inventors: John T. Welch, Paul J. Toscano, Rolf Claessen, Andrei Kornilov, Kulbinder Kumar Banger
  • MOCVD processes using precursors based on organometalloid ligands
    Patent number: 6099903
    Abstract: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: August 8, 2000
    Assignee: Research Foundation of State University of New York
    Inventors: Alain E. Kaloyeros, John T. Welch, Paul J. Toscano, Rolf Claessen, Andrei Kornilov, Kulbinder Kumar Banger