Patents by Inventor Kumar Shiralalgi

Kumar Shiralalgi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Enhanced probe for gathering data from semiconductor devices
    Patent number: 6703258
    Abstract: An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.
    Type: Grant
    Filed: July 2, 2002
    Date of Patent: March 9, 2004
    Assignee: Motorola, Inc.
    Inventors: Theresa J. Hopson, Kumar Shiralalgi, Ronald N. Legge
  • Enhanced probe for gathering data from semiconductor devices
    Publication number: 20020167008
    Abstract: An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.
    Type: Application
    Filed: July 2, 2002
    Publication date: November 14, 2002
    Inventors: Theresa J. Hopson, Kumar Shiralalgi, Ronald N. Legge
  • Enhanced probe for gathering data from semiconductor devices
    Patent number: 6479892
    Abstract: An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.
    Type: Grant
    Filed: October 31, 2000
    Date of Patent: November 12, 2002
    Assignee: Motorola, Inc.
    Inventors: Theresa J. Hopson, Kumar Shiralalgi, Ronald N. Legge