Abstract: A method of forming a mixed ionic electron conductor (MIEC)-based memory cell access device using a subtractive etch process is provided. After blanket depositing a MIEC material layer on a bottom electrode and a dielectric layer laterally surrounding the bottom electrode and blanket depositing a metal layer on the MIEC material layer, the metal layer and the MIEC material layer are patterned simultaneously.

Abstract: A mixed ionic electron conductor (MIEC)-based memory cell access device is provided. The MIEC-based memory cell access device includes a MIEC material portion located between a bottom electrode and a top electrode. A contact area between the MIEC material portion and the bottom electrode is substantially the same as a contact area between the MIEC material portion and the top electrode.

Abstract: Aspects of the invention are directed to piezoresponse force analysis of a material. A stimulus signal including a first frequency component is applied to a contact point on the material such that the stimulus signal actuates a portion of the material to experience a motion as a result of a piezoelectric effect. A resonant device is coupled to the contact point such that the resonant device experiences a resonant motion at the first frequency component in response to the motion of the material, the resonant motion having a greater displacement than a displacement of the motion of the material, and is substantially unaffected by mechanical properties of the material at the contact point. The resonant motion of the resonant device is detected and processed to produce a measurement representing the piezoresponse of the material at the contact point.

Abstract: Aspects of the invention are directed to piezoresponse force analysis of a material. A stimulus signal including a first frequency component is applied to a contact point on the material such that the stimulus signal actuates a portion of the material to experience a motion as a result of a piezoelectric effect. A resonant device is coupled to the contact point such that the resonant device experiences a resonant motion at the first frequency component in response to the motion of the material, the resonant motion having a greater displacement than a displacement of the motion of the material, and is substantially unaffected by mechanical properties of the material at the contact point. The resonant motion of the resonant device is detected and processed to produce a measurement representing the piezoresponse of the material at the contact point.