Abstract: According to one embodiment, a flow channel structure may include a first flow channel, and a second flow channel that joins the first flow channel. An end of the second flow channel close to the first flow channel has a first region having a depth shallower than a depth of the first flow channel.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer.

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

Abstract: A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm2 to 0.8 ?m2, and has an aperture ratio in the range 10 to 66%. The first electrode layer can be produced by etching using an etching mask in the form of a single particle layer of fine particles, or of a dot pattern formed by self-assembly of a block copolymer, or of a stamper.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

Abstract: The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 ?m2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

Abstract: A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

Abstract: A photoelectric conversion element according to an embodiments includes: a first metal layer; a semiconductor layer formed on the first metal layer; a second metal layer formed on the semiconductor layer, the second metal layer comprising a porous thin film with a plurality of openings each having a mean area not smaller than 80 nm2 and not larger than 0.8 ?m2 or miniature structures having a mean volume not smaller than 4 nm3 and not larger than 0.52 ?m3; and a wavelength converting layer formed between the semiconductor layer and the second metal layer, at least a refractive index of a portion of the wavelength converting layer being lower than a refractive index of a material of the semiconductor layer, the portion being at a distance of 5 nm or shorter from an end portion of the second metal layer.

Abstract: According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

Abstract: A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm2 to 0.8 ?m2, and has an aperture ratio in the range 10 to 66%. The first electrode layer can be produced by etching using an etching mask in the form of a single particle layer of fine particles, or of a dot pattern formed by self-assembly of a block copolymer, or of a stamper.

Abstract: The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.

Abstract: The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.

Abstract: According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.