Patents by Inventor Kumi Nakamura

Kumi Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8436535
    Abstract: An information acquisition method for acquiring information on a target object, that includes a step of promoting ionization of the target object using a substance for promoting ionization of the target object to cause the target object to emit, and a step of acquiring information on the mass of the flew target object using time-of-flight secondary ion mass spectrometry.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: May 7, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Hashimoto, Katsuaki Kuge, Manabu Komatsu, Kumi Nakamura, Kazuhiro Ban, Takeshi Imamura, Shin Kobayashi, Tadashi Okamoto
  • Publication number: 20100227308
    Abstract: An information acquisition method for acquiring information on a target object, that includes a step of promoting ionization of the target object using a substance for promoting ionization of the target object to cause the target object to emit, and a step of acquiring information on the mass of the flew target object using time-of-flight secondary ion mass spectrometry.
    Type: Application
    Filed: February 24, 2010
    Publication date: September 9, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hiroyuki Hashimoto, Katsuaki Kuge, Manabu Komatsu, Kumi Nakamura, Kazuhiro Ban, Takeshi Imamura, Shin Kobayashi, Tadashi Okamoto
  • Patent number: 7701138
    Abstract: An information acquisition method for acquiring information on a target object, that includes a step of promoting ionization of the target object using a substance for promoting ionization of the target object to cause the target object to emit, and a step of acquiring information on the mass of the flew target object using time-of-flight secondary ion mass spectrometry.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: April 20, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Hashimoto, Katsuaki Kuge, Manabu Komatsu, Kumi Nakamura, Kazuhiro Ban, Takeshi Imamura, Shin Kobayashi, Tadashi Okamoto
  • Patent number: 7291962
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Grant
    Filed: October 20, 2004
    Date of Patent: November 6, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20060183235
    Abstract: An information acquisition method for acquiring information on a target object, that includes a step of promoting ionization of the target object using a substance for promoting ionization of the target object to cause the target object to emit, and a step of acquiring information on the mass of the flew target object using time-of-flight secondary ion mass spectrometry.
    Type: Application
    Filed: December 28, 2005
    Publication date: August 17, 2006
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hiroyuki Hashimoto, Katsuaki Kuge, Manabu Komatsu, Kumi Nakamura, Kazuhiro Ban, Takeshi Imamura, Shin Kobayashi, Tadashi Okamoto
  • Patent number: 6917146
    Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: July 12, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6888296
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: May 3, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20050052108
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Application
    Filed: October 20, 2004
    Publication date: March 10, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6851998
    Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: February 8, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiaki Aiba, Masato Yamanobe, Taiko Motoi, Rie Ueno, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20040245905
    Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.
    Type: Application
    Filed: July 9, 2004
    Publication date: December 9, 2004
    Applicant: CANNON KABUSHIKI KAISHA
    Inventors: Toshiaki Aiba, Masato Yamanobe, Taiko Motoi, Rie Ueno, Kumi Nakamura, Masaaki Shibata
  • Publication number: 20040053308
    Abstract: The present invention provides a probe immobilized substrate and a method for manufacturing the same, wherein the probe is able to be analyzed without any problems using various surface analysis methods, sampling inspection loss becomes minimum, and target substances are able to be promptly and cheaply detected and quantified.
    Type: Application
    Filed: June 18, 2003
    Publication date: March 18, 2004
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Kumi Nakamura
  • Publication number: 20020096986
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Application
    Filed: March 4, 2002
    Publication date: July 25, 2002
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6380665
    Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: April 30, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Masato Yamanobe, Rie Ueno, Toshiaki Aiba, Kumi Nakamura, Masaaki Shibata
  • Patent number: 6017259
    Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate, an electroconductive film connecting the device electrodes and an electron-emitting region formed in the electroconductive film. The electron-emitting device is manufactured by (1) applying an ink containing the material for producing the electroconductive film to a predetermined position of the substrate in the form of one or more than one drops by means an ink-jet apparatus, (2) drying and/or baking the applied drop(s) to turn the drop(s) into an electroconductive thin film and (3) applying a voltage to the pair of device electrodes to flow an electric current through the electroconductive film and produce an electron-emitting region. Steps (1) and (2) are so conducted that the electroconductive film formed by steps (1) and (2) have a latent image apt to produce an electron-emitting region by the Joule's heat generated by step (3).
    Type: Grant
    Filed: October 15, 1996
    Date of Patent: January 25, 2000
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Takeo Tsukamoto, Sotomitsu Ikeda, Kumi Nakamura, Toyoko Kobayashi, Naoko Miura