Patents by Inventor Kumi Oguchi

Kumi Oguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having contact electrode to semiconductor substrate
    Patent number: 6797551
    Abstract: An isolation region is embedded in a semiconductor substrate. The height of the upper face of the isolation region is substantially equal to the height of the surface of the semiconductor substrate. A gate electrode is formed on a gate insulating film and over the isolation region. A first side face of the gate electrode is formed over the isolation region. A second side face of the gate electrode is formed over the active region. A field insulator is formed on the isolation region. A first side face of the field insulator contacts with the first side face of the gate electrode. A second side face of the field insulator is continuous with a plane obtained by extending the side face of the isolation region. A sidewall insulator has a sidewall contacting with the second side face of the field insulator and the second side face of the gate electrode.
    Type: Grant
    Filed: December 11, 2002
    Date of Patent: September 28, 2004
    Assignee: Kabushi Kaisha Toshiba
    Inventor: Kumi Oguchi
  • Semiconductor device having contact electrode to semiconductor substrate
    Publication number: 20030116808
    Abstract: An isolation region is embedded in a semiconductor substrate. The height of the upper face of the isolation region is substantially equal to the height of the surface of the semiconductor substrate. A gate electrode is formed on a gate insulating film and over the isolation region. A first side face of the gate electrode is formed over the isolation region. A second side face of the gate electrode is formed over the active region. A field insulator is formed on the isolation region. A first side face of the field insulator contacts with the first side face of the gate electrode. A second side face of the field insulator is continuous with a plane obtained by extending the side face of the isolation region. A sidewall insulator has a sidewall contacting with the second side face of the field insulator and the second side face of the gate electrode.
    Type: Application
    Filed: December 11, 2002
    Publication date: June 26, 2003
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Kumi Oguchi
  • Semiconductor device having contact electrode to semiconductor substrate
    Patent number: 6573570
    Abstract: An isolation region is embedded in a semiconductor substrate. The height of the upper face of the isolation region is substantially equal to the height of the surface of the semiconductor substrate. A gate electrode is formed on a gate insulating film and over the isolation region. A first side face of the gate electrode is formed over the isolation region. A second side face of the gate electrode is formed over the active region. A field insulator is formed on the isolation region. A first side face of the field insulator contacts with the first side face of the gate electrode. A second side face of the field insulator is continuous with a plane obtained by extending the side face of the isolation region. A sidewall insulator has a sidewall contacting with the second side face of the field insulator and the second side face of the gate electrode.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: June 3, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Kumi Oguchi
  • Semiconductor device having contact electrode to semiconductor substrate
    Publication number: 20020125539
    Abstract: An isolation region is embedded in a semiconductor substrate. The height of the upper face of the isolation region is substantially equal to the height of the surface of the semiconductor substrate. A gate electrode is formed on a gate insulating film and over the isolation region. A first side face of the gate electrode is formed over the isolation region. A second side face of the gate electrode is formed over the active region. A field insulator is formed on the isolation region. A first side face of the field insulator contacts with the first side face of the gate electrode. A second side face of the field insulator is continuous with a plane obtained by extending the side face of the isolation region. A sidewall insulator has a sidewall contacting with the second side face of the field insulator and the second side face of the gate electrode.
    Type: Application
    Filed: March 6, 2002
    Publication date: September 12, 2002
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Kumi Oguchi