Abstract: RNA molecules for RNA interference to target a mutant allele with a point mutation, wherein the molecule has a nucleotide sequence complementary to a nucleotide sequence of a coding region of the mutant allele; and when counted from the base at the 5?-end in the nucleotide sequence complementary to the sequence of the mutant allele: a base at position 5 or 6 is mismatched with a base in the mutant allele; a base at position 10 or 11 is at the position of the point mutation and is identical to the base at the position of the point mutation in the mutant allele; the group at the 2?-position of the pentose in the ribonucleotide at position 8 is modified with OCH3, halogen, or LNA; and the group at the 2?-position of the pentose in the ribonucleotide at position 7 is not modified with any of OCH3, halogen, and LNA.

Abstract: A method for treating a specimen in soluble GPC3 immunoassay, the method including mixing a soluble GPC3-containing specimen with a reducing agent. A soluble GPC3 immunoassay method including the following (a) and (b): (a) mixing a soluble GPC3-containing specimen with a reducing agent; and (b) measuring the amount of soluble GPC3 in the mixture obtained in (a) using one or more kinds of antibodies against soluble GPC3. A soluble GPC3 immunoassay reagent including the following (a) and (b): (a) a reducing agent; and (b) one or more kinds of antibodies against soluble GPC3.

Abstract: A hood lock device has a base plate having a striker groove, a primary latch configured to fasten a hood in a totally closed state, and a secondary latch, the secondary latch has a latch main body of steel and a handle of resin, and the latch main body has a forcing meshing portion configured to come into engagement with a striker passing across a half opening position and moving to a totally closing position and to be pressed in a latching direction opposite to an unlatching direction by the striker in a case that a hook portion configured to lock the striker recedes from the striker groove and a mounting portion provided adjacent to the forcing meshing portion and on which the handle is mounted.

Abstract: A semiconductor device includes first and second insulating films and a semiconductor part. The semiconductor part is provided on the first insulating film and surrounded by the second insulating film. The semiconductor part includes first and fourth semiconductor layers of a first conductivity type, second and third semiconductor layers of a second conductivity type, and first to third contact regions provided respectively on the second to fourth semiconductor layer. The second to fourth semiconductor layers are arranged in a first direction on the first semiconductor layer. The fourth semiconductor layer is provided between the second and third semiconductor layers. The first and second contact regions being provided with first distances to the second insulating film in a second direction crossing the first direction. The first distances are less than a second distance in the second direction from the third contact region to the second insulating film.

Abstract: A vehicle door hinge that has a desorption function while enabling weight reduction and increasing production efficiency. The vehicle door hinge comprises a base member (2U) fixed to the door-side of the vehicle, a base member (3U) fixed to the vehicle body side; a hinge shaft (4U) rotatably connects the base members (2U, 3U) to each other; a screwed body (5U) that is detachably screwed in the axial direction to the hinge shaft (4U) so that the base member (3U) and the hinge shaft (4U) rotate integrally; bushes (6U, 7U) fitted into a shaft holes (22U) of the base member (2U) so that the base member (2U) and the hinge shaft can rotate relative to each other; and a retaining portion (8U) for preventing the hinge shaft (4U) from coming off from the shaft hole (22U) of the base member. The base members (2U, 3U) are cast from aluminum alloy.

Abstract: A hood lock device has a base plate having a striker groove, a primary latch configured to fasten a hood in a totally closed state, and a secondary latch, the secondary latch has a latch main body of steel and a handle of resin, and the latch main body has a forcing meshing portion configured to come into engagement with a striker passing across a half opening position and moving to a totally closing position and to be pressed in a latching direction opposite to an unlatching direction by the striker in a case that a hook portion configured to lock the striker recedes from the striker groove and a mounting portion provided adjacent to the forcing meshing portion and on which the handle is mounted.

Abstract: A hood latch assembly comprising: a striker; a base plate having a striker guiding path; a latch secured to the base plate by a latch shaft, the latch being configured to rotate from an unlatching position to an over-rotation position across a latching position upon engagement with the striker; a latch spring configured to push the latch in an unlatching direction; and a ratchet secured to the base plate by a ratchet shaft, the ratchet being configured to engage with the latch returning to the latching position from the over-rotation position by spring force of the latch spring and to maintain engagement of the latch with the striker, wherein the latch has a ratchet contact arm including a straight portion, the straight portion of the ratchet contact arm being configured to contact a base portion of the ratchet when the latch reaches the over-rotation position.

Abstract: A vehicle door hinge that has a desorption function while enabling weight reduction and increasing production efficiency. The vehicle door hinge comprises a base member (2U) fixed to the door-side of the vehicle, a base member (3U) fixed to the vehicle body side; a hinge shaft (4U) rotatably connects the base members (2U, 3U) to each other; a screwed body (5U) that is detachably screwed in the axial direction to the hinge shaft (4U) so that the base member (3U) and the hinge shaft (4U) rotate integrally; bushes (6U, 7U) fitted into a shaft holes (22U) of the base member (2U) so that the base member (2U) and the hinge shaft can rotate relative to each other; and a retaining portion (8U) for preventing the hinge shaft (4U) from coming off from the shaft hole (22U) of the base member. The base members (2U, 3U) are cast from aluminum alloy.

Abstract: According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, an insulating film, a gate electrode, a first semiconductor region, and a second semiconductor region. The source region includes a source layer of the first conductivity type, a first back gate layer of the second conductivity type, and a second back gate layer of the second conductivity type. The first back gate layer is adjacent to the second semiconductor region on one side in a channel length direction, and is adjacent to the source layer on one other side in the channel length direction. The second back gate layer is adjacent to the source layer on the one side in the channel length direction, and is adjacent to the second semiconductor region on the one other side in the channel length direction.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, and first and second transistors. The substrate has a first conductivity type. The first and second transistors are provided on the substrate. The first and second transistors each include a gate electrode provided on the substrate, a gate insulating film provided between the substrate and the gate electrode, a source and a drain region of a second conductivity type, and a high-concentration channel region of the first conductivity type. The source and drain regions are provided in regions of an upper portion of the substrate. A region directly under the gate electrode is interposed between the regions. The high-concentration channel region is formed on a side of the source region of the region of the upper portion directly under the gate electrode. The high-concentration channel region has an effective impurity concentration higher than that of the upper portion.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a first conductivity-type region, a second conductivity-type source region, a gate insulating film and a gate electrode. The first conductivity-type region is provided in an upper layer portion of the semiconductor substrate. The second conductivity-type source region and a second conductivity-type drain region are arranged by being separated from each other in an upper layer portion of the first conductivity-type region. The gate insulating film is provided on the semiconductor substrate. The gate electrode is provided on the gate insulating film. An effective concentration of impurities in a channel region corresponding to a region directly below the gate electrode in the first conductivity-type region has a maximum at an interface between the gate insulating film and the channel region, and decreases toward a lower part of the channel region.

Abstract: According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, an insulating film, a gate electrode, a first semiconductor region, and a second semiconductor region. The source region includes a source layer of the first conductivity type, a first back gate layer of the second conductivity type, and a second back gate layer of the second conductivity type. The first back gate layer is adjacent to the second semiconductor region on one side in a channel length direction, and is adjacent to the source layer on one other side in the channel length direction. The second back gate layer is adjacent to the source layer on the one side in the channel length direction, and is adjacent to the second semiconductor region on the one other side in the channel length direction.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first source portion, a second source portion, a drain portion, a first main electrode, a second main electrode, and a gate electrode. The first source portion includes a first source contact region of a second conductivity type and a back gate contact region of the first conductivity type. The drain portion includes a drain contact region of the second conductivity type, a first drift region of the second conductivity type, and a second drift region of the second conductivity type. When a reverse bias is applied to p-n junction between the semiconductor layer and the drain portion, avalanche breakdown is more likely to occur near the first drift region than near the second drift region.

Abstract: The peptide production method of the present invention produces a peptide (SEQ ID NO: 1) of a protein from Plasmodium falciparum, which is effective as a malaria vaccine. The method produces the peptide of SEQ ID NO: 1 by linking the fragments (i) through (v) shown below: (v) Asn-Asn-Asp-Xaa (SEQ ID NO: 2); (iv) Asp-Phe-Lys-Thr-Pro (SEQ ID NO: 3); (iii) Asn-Lys-Thr-Tyr-Asp-Leu (SEQ ID NO: 4); (ii) Phe-Tyr-Asn-Ser-Glu (SEQ ID NO: 5); and (i) Xaa-Ala-Ser-Glu (SEQ ID NO: 6), where ‘Xaa’ in (i) and (v) represents zero or any arbitrary number of amino acid residues.

Abstract: F The peptide production method of the present invention produces a peptide (SEQ ID NO: 1) of a protein from Plasmodium falciparum, which is effective as a malaria vaccine. The method produces the peptide of SEQ ID NO: 1 by linking the fragments (i) through (v) shown below: (v) Asn-Asn-Asp-Xaa; (SEQ ID NO: 2) (iv) Asp-Phe-Lys-Thr-Pro; (SEQ ID NO: 3) (iii) Asn-Lys-Thr-Tyr-Asp-Leu; (SEQ ID NO: 4) (ii) Phe-Tyr-Asn-Ser-Glu; (SEQ ID NO: 5) and (i) Xaa-Ala-Ser-Glu, (SEQ ID NO: 6) where ‘Xaa’ in (i) and (v) represents zero or any arbitrary number of amino acid residues.

Abstract: A gate electrode is formed on a gate insulator above a semiconductor substrate. Diffused regions are formed in a surface of the semiconductor substrate as sandwiching the gate electrode therebetween. A high-resistance layer is formed in the surface of the semiconductor substrate as electrically connected to the diffused region. A low-resistance layer is formed in the surface of the semiconductor substrate as electrically connected to the high-resistance layer. A drain electrode is connected to the low-resistance layer.

Abstract: The electrical junction box X includes an upper cover 1, a distributing board 4 fitted with a busbar 5, a wiring sheet 6, and the lower cover 10. The lower cover 10 is formed with a through-hole 8a which is inserted by a terminal 5′ of the busbar 5. The wiring sheet 6 is provided with a through-hole 7a through which the terminal 5′ of the busbar 5 is inserted. This allows a smaller assembling tolerance between the terminal 5′ of the busbar 5 and the through-hole 8a in combination of the wiring sheet 6b attached to the distributing board 4 with the lower cover 10.

Abstract: The electrical junction box X includes an upper cover 1, a distributing board 4 fitted with a busbar 5, a wiring sheet 6, and the lower cover 10. The lower cover 10 is formed with a through-hole 8a which is inserted by a terminal 5′ of the busbar 5. The wiring sheet 6 is provided with a through-hole 7a through which the terminal 5′ of the busbar 5 is inserted. This allows a smaller assembling tolerance between the terminal 5′ of the busbar 5 and the through-hole 8a in combination of the wiring sheet 6b attached to the distributing board 4 with the lower cover 10.

Abstract: An assembling structure of an electronic unit to an electrical connecting box is provided. This assembling structure is provided with a miss-connection preventing portion on at least one of an electrical connecting box and an electronic unit combined to each other. The miss-connecting preventing portion is put in an interfering state with the mating side member to prevent the combination thereof when the two are combined improperly. The miss-connection prevention portion is provided at a peripheral wall portion of the electronic unit so that it interferes with a peripheral wall portion of the electrical connecting box when combination of the electrical connecting box and the electronic unit is improper.

Abstract: The present invention is to provide an assembling structure of an electronic unit to an electrical connecting box which is not subjected to any spatial limitation when electrical parts are mounted on an electronic unit and which is provided with a miss-connection preventing function.