Abstract: Disclosed is a flat battery which includes power generating element 18 accommodated in an inner space formed by sealing outer peripheral edges of package members 16 and 17, collector 11a, 13a connected to an electrode plate of power generating element 18 and an electrode tab 14, 15 taken out from the outer peripheral edges of package members 16 and 17. Electrode tab 14, 15 has conducting portion 151 overlapping and joined to collector 11a, 13a and stress relieving portion 152 formed of a material having higher elasticity than that of conducting portion 151. It is thus possible to prevent the occurrence of wrinkles in collector 11a, 13a or electrode tab 14, 15 and separations in weld joints due to a difference in expansion/contraction rate between collector 11a, 13a and electrode tab 14, 15.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a method for producing a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Disclosed is a flat battery which includes power generating element 18 accommodated in an inner space formed by sealing outer peripheral edges of package members 16 and 17, collector 11a, 13a connected to an electrode plate of power generating element 18 and an electrode tab 14, 15 taken out from the outer peripheral edges of package members 16 and 17. Electrode tab 14, 15 has conducting portion 151 overlapping and joined to collector 11a, 13a and stress relieving portion 152 formed of a material having higher elasticity than that of conducting portion 151. It is thus possible to prevent the occurrence of wrinkles in collector 11a, 13a or electrode tab 14, 15 and separations in weld joints due to a difference in expansion/contraction rate between collector 11a, 13a and electrode tab 14, 15.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: Medicaments for treating diseases related to HB-EGF escalation are in demand. The present invention provides a monoclonal antibody or an antibody fragment thereof which binds to a cell membrane-bound HB-EGF, a membrane type HB-EGF and a secretory HB-EGF.

Abstract: It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of Bi2O3, from 4 to 64% of TiO2 and from 6 to 50% of B2O3, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

Abstract: To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Abstract: It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of Bi2O3, from 4 to 64% of TiO2 and from 6 to 50% of B2O3, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

Abstract: To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Abstract: A thin-film resistor comprising a mixture of rhodium (Rh) oxide as a resistive material, and at least one element M selected from the group consisting of silicon (Si), lead (Pb), bismuth (Bi), zirconium (Zr), barium (Ba), aluminium (Al), boron (B), tin (Sn), and titanium (Ti), wherein M/Rh, or the ratio of the number of element M atoms to that of rhodium (Rh) atoms is in the range of 0.3 to 3.0. Thin-film resistor is formed from the process of preparing a solution of an organometallic material, coating the material on a substrate, drying and then firing the material at a peak temperature not less than 500.degree. C.

Abstract: A resistor comprises iridium and at least one metal selected from the group consisting of silicon, bismuth, lead, tin, aluminum, boron, titanium, zirconium, calcium and barium. A process for producing the resistor comprises the steps of coating a solution of an iridium containing organometallic material onto a substrate and subsequently firing the coated solution. The resistor is used as a heating resistor of a thermal head.

Abstract: A resistor film formed by applying onto a substrate a homogeneous mixture solution of metal organic compounds including metals selected from the element group of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), barium (Ba), and the like, and a metal selected from the group of iridium (Ir) and ruthenium (Ru) and burning the homogeneous mixture solution. The homogeneous mixture solution is burned at a temperature of 700.degree. C. or more in an atmosphere of oxygen.

Abstract: A method for producing a resistor is disclosed, comprising coating a metal organic compound solution containing a ruthenium complex and at least one complex of an element selected from the group consisting of silicon, barium, bismuth and lead on a substrate and then firing it. This resistor is a uniform thin-film resistor and is suitable for use as a resistor to be used in hybrid ICs and various electronic devices.