Abstract: The sintered body including silicon oxide and carbon, wherein the sintered body has a D band peak at a wave number of 1,311 cm?1 to 1,371 cm?1 and a G band peak at a wave number of 1,572 cm?1 to 1,632 cm?1 in a Raman spectrum, and wherein the D band peak or the G band peak have a higher intensity than a fifth peak present at a wave number of 1,027 cm?1 to 1,087 cm?1 in the Raman spectrum, is disclosed.

Abstract: The sintered body including boron carbide, wherein the sintered body includes a zone, in which a volume ratio of grains having a grain size of greater than 30 ?m and 60 ?m or less is in a range of 50% to 70% based on a total volume of grains, as observed on a surface of the sintered body, is disclosed.

Abstract: A fan frame includes a central base, a frame wall, and a plurality of static blades radially extending from the central base to the frame wall, each static blade is connected to the central base at a first end and connected to the frame wall at a second end, the central base is provided with a first wire groove, the frame wall is provided with a second wire groove, the first wire groove and the second wire groove are configured for accommodating wires, and the second wire groove has a shape same as the second end of the static blade connected to the frame wall for gathering the wires to shape similar to the static blade. A fan assembly including the fan frame is also disclosed.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: An electronic device including a touch-enabled display module configured to display a plurality of windows according to a multi-window mode; and a control module configured to displaying on the touch screen a first application window and a second application window according to the multi-window mode, alter the first application window in response to a touchscreen input received via the touch-enabled display, and automatically alter the second application window in response to the alteration of the first application window.

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises providing a semiconductor substrate, forming a semiconductor element on an active surface of the semiconductor substrate, forming in the semiconductor substrate through vias that extend from the active surface into the semiconductor substrate, forming a first pad layer on the active surface of the semiconductor substrate, performing a first planarization process on the first pad layer, performing on an inactive surface of the semiconductor substrate a thinning process to expose the through vias, forming a second pad layer on the inactive surface of the semiconductor substrate, performing a second planarization process on the second pad layer, and after the second planarization process, performing a third planarization process on the first pad layer.

Abstract: A semiconductor package may include first and second substrates, which are vertically stacked, a semiconductor device layer on a bottom surface of the second substrate to face a top surface of the first substrate, upper chip pads and an upper dummy pad on the top surface of the first substrate, penetration electrodes, which each penetrate the first substrate and are connected to separate, respective upper chip pads, lower chip pads on a bottom surface of the semiconductor device layer and electrically connected to separate, respective upper chip pads, and a lower dummy pad on the bottom surface of the semiconductor device layer and electrically isolated from the upper dummy pad. A distance between the upper and lower dummy pads in a horizontal direction that is parallel to the first substrate may be smaller than a diameter of the lower dummy pad.

Abstract: Described is a catalyst obtained by supporting magnesium and cerium on activated alumina, firing same to immobilize the metals, and then impregnating same with palladium and performing reduction thereon, and is applied, when hydrogen peroxide is prepared by means of an anthraquinone process, to operation solution regeneration or hydrogenation, and thus an efficient regeneration conversion rate or synthesis yield is achieved.

Abstract: A double-layer structured catalyst for use in dehydrogenation of light hydrocarbon gas within a range of C3 to C6, configured such that platinum, tin, and an alkali metal are carried in a phase-changed carrier, wherein the tin component is present in an entire region inside the carrier, and the platinum and the tin form a single complex and are present in an alloy form within a range of a predetermined thickness from an outer periphery of the carrier.

Abstract: A manufacturing method of a ring-shaped element for an etcher, comprises a granulation operation comprising i) a slurry manufacturing process of preparing a slurry by mixing a raw material including boron carbide, a sinterability enhancer with a solvent; and ii) a granulation process of drying the slurry to prepare granulated raw material; a molding operation of manufacturing a green body by molding the granulated raw material; a sintering operation of carbonizing and sintering the green body to manufacture a sintered body; a shape operation of shaping the sintered body to a ring-shaped element for an etcher. The sinterability enhancer comprises one selected from the group consisting of carbon, boron oxide and combinations thereof.

Abstract: A method for fabricating a semiconductor device includes forming a first mask layer on a substrate, forming an under layer on the first mask layer, forming a first photoresist pattern that includes tin on the under layer, converting at least a part of the first photoresist pattern into a second photoresist pattern including tin fluoride, through a plasma treatment process using fluorine element, etching the under layer using the second photoresist pattern as a first mask to form an under pattern, etching the first mask layer to form a first mask pattern, and etching at least a part of the substrate, using a mask pattern including the first mask pattern as a second mask.

Abstract: Described is a catalyst for preparing hydrogen peroxide by an anthraquinone process and for regenerating a working solution and a method of preparing the catalyst. The catalyst contains palladium, magnesium, and cerium components uniformly distributed in alumina. Alternatively, the catalyst contains a palladium component distributed in a ring shape in an alumina sphere and magnesium and cerium components uniformly distributed in the alumina.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: The present disclosure relates to a dehydrogenation catalyst for use in dehydrogenation of a branched light hydrocarbon gas, the catalyst including platinum, tin, and an alkali metal which are carried in a phase-changed carrier, in which platinum and tin form a single complex and are present in an alloy form within a predetermined thickness from the outer surface of the catalyst.

Abstract: A double-layer structured catalyst for use in dehydrogenation of light hydrocarbon gas within a range of C3 to C6, configured such that platinum, tin, and an alkali metal are carried in a phase-changed carrier, wherein the tin component is present in an entire region inside the carrier, and the platinum and the tin form a single complex and are present in an alloy form within a range of a predetermined thickness from an outer periphery of the carrier.

Abstract: The present invention relates to a catalyst having improved selectivity and reactivity and applied to preparing olefins by dehydrogenating C9 to C13 paraffin, and particularly to a technique for preparing a catalyst, which uses a heat-treated support having controlled pores, and most of metal components contained therein are distributed evenly in a support in the form of an alloy rather than in the form of each separate metal, thereby exhibiting high a conversion rate and selectivity when used in dehydrogenation.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and cis amole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A non-contact shaping device includes a first fixture including a fixing section structured to alternately blow out and suck in gas. The fixing section may fix, through suction of gas, a glass plate thereon. An optic heat source processing device is selectively set above predetermined portions of the glass plate to heat, in a non-contact manner, and thus soften, in a temperature-controlled manner, the portions for curving and suspending downward along an edge of the fixing section. The curved glass plate is then lifted up through blowing gas from the first fixture. The second fixture selectively covers the curved glass plate and blow gas therefrom to flow, in collaborative combination with the gas blown from the first fixture, around surfaces of the curved glass plate for cooling and fixing a shape of the curved glass plate in a non-contact manner to form a three-dimensional curve-surfaced glass product.

Abstract: A boron carbide sintered body includes necked boron carbide-containing particles. The thermal conductivity of the boron carbide sintered body at 400° C. is 27 W/m·K or less and the ratio of the thermal conductivity of the boron carbide sintered body at 25° C. to that of the boron carbide sintered body at 800° C. is 1:0.2 to 1:3.