Abstract: A method for forming a semiconductor device includes patterning a substrate to form a strip including a first semiconductor material, forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above the isolation region, forming a dummy structure along sidewalls and a top surface of the upper portion of the strip, performing a first etching process on an exposed portion of the upper portion of the strip to form a first recess, the exposed portion of the strip being exposed by the dummy structure, after performing the first etching process, reshaping the first recess to have a V-shaped bottom surface using a second etching process, wherein the second etching process is selective to first crystalline planes having a first orientation relative to second crystalline planes having a second orientation, and epitaxially growing a source/drain region in the reshaped first recess.

Abstract: A method for controlling the rotation speed of a compressor for a refrigerator according to the frequency of use of the refrigerator. According to the control method, when the number of times or the cumulative time that the refrigerator doors are opened during a first predetermined time interval exceeds a respective reference value, the rotation speed of the compressor is increased. When the doors remain closed for a second predetermined time period, the rotation speed of the compressor is decreased.